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| Presentation | 2017-07-31 10:15 Multi Sensor Operation using Octagonal Multi-Output MOSFET Tomochika Harada (Yamagata Univ.)  SDM2017-32 ICD2017-20 Link to ES Tech. Rep. Archives: SDM2017-32 ICD2017-20 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | By using the Si material and the MOSFET type as the sensor device, it is possible to fabricate the various sensor device by the existing Si process, and it is possible to obtain advantages such as low cost and ease of circuit integration etc. Further, by making the octagonal structure, the electrode arrangement becomes line symmetric and point symmetrical, and the effect of suppressing the deviation of the terminals at the time of manufacture can be expected. In this paper, the multifunctional sensor of octagonal MOSFET is evaluated, since it can be used as a stress detection, a temperature detection, and a Hall effect sensor, in order to use it as a basic element of a multiple sensor. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Octagonal MOSFET / stress sensor / Hall sensor / temperature sensor / multi-output MOSFET / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 167, ICD2017-20, pp. 7-12, July 2017. | |
| Paper # | ICD2017-20 | |
| Date of Issue | 2017-07-24 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2017-32 ICD2017-20 Link to ES Tech. Rep. Archives: SDM2017-32 ICD2017-20 |
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| Conference Information | |
| Committee | SDM ICD ITE-IST |
| Conference Date | 2017-07-31 - 2017-08-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido-Univ. Multimedia Education Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2017-07-SDM-ICD-IST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Multi Sensor Operation using Octagonal Multi-Output MOSFET |
| Sub Title (in English) | |
| Keyword(1) | Octagonal MOSFET |
| Keyword(2) | stress sensor |
| Keyword(3) | Hall sensor |
| Keyword(4) | temperature sensor |
| Keyword(5) | multi-output MOSFET |
| Keyword(6) | |
| Keyword(7) | |
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| 1st Author's Name | Tomochika Harada |
| 1st Author's Affiliation | Yamagata University (Yamagata Univ.) |
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| Speaker | Author-1 |
| Date Time | 2017-07-31 10:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ICD |
| Paper # | SDM2017-32, ICD2017-20 |
| Volume (vol) | vol.117 |
| Number (no) | no.166(SDM), no.167(ICD) |
| Page | pp.7-12 |
| #Pages | 6 |
| Date of Issue | 2017-07-24 (SDM, ICD) |
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