Paper Abstract and Keywords |
Presentation |
2018-05-24 14:45
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama) ED2018-17 CPM2018-4 SDM2018-12 Link to ES Tech. Rep. Archives: ED2018-17 CPM2018-4 SDM2018-12 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InSb has met the requirements of high-performance channel material with faster response towards ultra-fast and very low power devices with its superior properties for CMOS technology. The single crystalline films of InSb and GaSb on the same Si substrate is yet to be reported. Our research group has reported Al2O3/InSb/Si(111) based nMOSFETs, single crystalline GaSb thin film with narrow FWHM on Si(111)?√3x√3-Ga, effective GaSb buffer layer and single crystalline InGaSb film on GaSb/Si(111)?√3x√3-Ga. Here in continuation, we report smooth, single crystalline InSb thin film channel layer with InxGa1-xSb (x=90,85,80 &75%) heteroepitaxial films on Si(111). |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Reflection high-energy electron diffraction (RHEED) / Scanning electron microscopy (SEM) / X-ray scattering, diffraction, and reflection / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 58, ED2018-17, pp. 15-18, May 2018. |
Paper # |
ED2018-17 |
Date of Issue |
2018-05-17 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2018-17 CPM2018-4 SDM2018-12 Link to ES Tech. Rep. Archives: ED2018-17 CPM2018-4 SDM2018-12 |
Conference Information |
Committee |
ED CPM SDM |
Conference Date |
2018-05-24 - 2018-05-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Toyohashi Univ. of Tech. (VBL) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others |
Paper Information |
Registration To |
ED |
Conference Code |
2018-05-ED-CPM-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) |
Sub Title (in English) |
|
Keyword(1) |
Reflection high-energy electron diffraction (RHEED) |
Keyword(2) |
Scanning electron microscopy (SEM) |
Keyword(3) |
X-ray scattering, diffraction, and reflection |
Keyword(4) |
|
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
A. A. Mohammad Monzur-Ul-Akhir |
1st Author's Affiliation |
University of Toyama (University of Toyama) |
2nd Author's Name |
Masayuki Mori |
2nd Author's Affiliation |
University of Toyama (University of Toyama) |
3rd Author's Name |
Koichi Maezawa |
3rd Author's Affiliation |
University of Toyama (University of Toyama) |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2018-05-24 14:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2018-17, CPM2018-4, SDM2018-12 |
Volume (vol) |
vol.118 |
Number (no) |
no.58(ED), no.59(CPM), no.60(SDM) |
Page |
pp.15-18 |
#Pages |
4 |
Date of Issue |
2018-05-17 (ED, CPM, SDM) |
|