IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-05-25 10:55
Fabrication of nanocavity Raman silicon laser on (100) SOI substrate with a 45 degree rotated top Si layer
Yukiko Yamauchi (Osaka Pre Univ.), Makoto Okano (AIST), Susumu Noda (Kyoto Univ.), Yasushi Takahashi (Osaka Pre Univ.) LQE2018-14
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed silicon Raman lasers based on a high quality-factor (Q) photonic crystal nanocavity which has a potential for a light source in photonic integrated circuits. This device must be fabricated in the [100] crystal direction of the (100) SOI substrate to enhance the Raman gain, and there was a misalignment of 45-rotational degrees from the [110] crystal direction in which the substrate was easily cleavable. In this study, we fabricated a nanocavity Raman laser on a (100) SOI substrate whose crystal orientation of the top Si layer was rotated by 45 degrees relative to the silicon support wafer. The Q values, which is important for the laser oscillation, are as high as those studied thus far, and the room-temperature continuous-wave laser oscillation is observed at an extremely low threshold less than 1 uW. In this new substrate the cleavage is able to be performed in a direction perpendicular to the longitudinal direction of laser. This result helps realizing the mass production of the silicon Raman nanocavity laser using the CMOS process and integration with other Si photonics devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Raman laser / Silicon laser / Photonic crystal / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 62, LQE2018-14, pp. 17-20, May 2018.
Paper # LQE2018-14 
Date of Issue 2018-05-17 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2018-14

Conference Information
Committee LQE LSJ  
Conference Date 2018-05-24 - 2018-05-25 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2018-05-LQE-LSJ 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of nanocavity Raman silicon laser on (100) SOI substrate with a 45 degree rotated top Si layer 
Sub Title (in English)  
Keyword(1) Raman laser  
Keyword(2) Silicon laser  
Keyword(3) Photonic crystal  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yukiko Yamauchi  
1st Author's Affiliation Osaka Prefecture University (Osaka Pre Univ.)
2nd Author's Name Makoto Okano  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Susumu Noda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yasushi Takahashi  
4th Author's Affiliation Osaka Prefecture University (Osaka Pre Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2018-05-25 10:55:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2018-14 
Volume (vol) vol.118 
Number (no) no.62 
Page pp.17-20 
#Pages 4 
Date of Issue 2018-05-17 (LQE) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan