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Paper Abstract and Keywords
Presentation 2018-06-25 15:15
Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD
Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22 Link to ES Tech. Rep. Archives: SDM2018-22
Abstract (in Japanese) (See Japanese page) 
(in English) A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding features and filled defect states of SiO2/GaN structure were studied by x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS), respectively. And, post deposition anneal (PDA) was performed in XPS/PYS system without air exposure to evaluate the thermal stability of SiO2/GaN structure. Chemical structure at SiO2/GaN interface was found to be thermally stable against PDA at temperatures up to 600C. With increasing PDA temperatures over 700C, diffusion and incorporation of Ga atoms into SiO2 were detected. And, it was found that PDA at temperatures over 600C was effective to decrease the filled gap states in the region near the SiO2/GaN interface.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / SiO2 / Remote O2 Plasma Enhanced CVD / Thermal Stability / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 110, SDM2018-22, pp. 29-32, June 2018.
Paper # SDM2018-22 
Date of Issue 2018-06-18 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF SDM2018-22 Link to ES Tech. Rep. Archives: SDM2018-22

Conference Information
Committee SDM  
Conference Date 2018-06-25 - 2018-06-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2018-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) SiO2  
Keyword(3) Remote O2 Plasma Enhanced CVD  
Keyword(4) Thermal Stability  
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1st Author's Name Ryohei Matsuda  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Akio Ohta  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Noriyuki Taoka  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Mitsuhisa Ikeda  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Katsunori Makihara  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Mitsuaki Shimizu  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Seiichi Miyazaki  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2018-06-25 15:15:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2018-22 
Volume (vol) vol.118 
Number (no) no.110 
Page pp.29-32 
#Pages
Date of Issue 2018-06-18 (SDM) 


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