Paper Abstract and Keywords |
Presentation |
2018-06-25 15:15
Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22 Link to ES Tech. Rep. Archives: SDM2018-22 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding features and filled defect states of SiO2/GaN structure were studied by x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS), respectively. And, post deposition anneal (PDA) was performed in XPS/PYS system without air exposure to evaluate the thermal stability of SiO2/GaN structure. Chemical structure at SiO2/GaN interface was found to be thermally stable against PDA at temperatures up to 600C. With increasing PDA temperatures over 700C, diffusion and incorporation of Ga atoms into SiO2 were detected. And, it was found that PDA at temperatures over 600C was effective to decrease the filled gap states in the region near the SiO2/GaN interface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / SiO2 / Remote O2 Plasma Enhanced CVD / Thermal Stability / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 110, SDM2018-22, pp. 29-32, June 2018. |
Paper # |
SDM2018-22 |
Date of Issue |
2018-06-18 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2018-22 Link to ES Tech. Rep. Archives: SDM2018-22 |
|