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Paper Abstract and Keywords
Presentation 2018-08-08 09:45
Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2018-37 ICD2018-24 Link to ES Tech. Rep. Archives: SDM2018-37 ICD2018-24
Abstract (in Japanese) (See Japanese page) 
(in English) We present a new finding that subthreshold slope (SS) variability is reduced at high temperature in both bulk and silicon-on-thin-box (SOTB) FETs, owing to a negative correlation between SS and its temperature coefficient dSS/dT. For understanding the temperature effect on subthreshold slope variability, an effective current path model is proposed, and verified by 3D TCAD simulation.
Keyword (in Japanese) (See Japanese page) 
(in English) Variability / Subthreshold Slope / Temperature / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 172, SDM2018-37, pp. 65-70, Aug. 2018.
Paper # SDM2018-37 
Date of Issue 2018-07-31 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-37 ICD2018-24 Link to ES Tech. Rep. Archives: SDM2018-37 ICD2018-24

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2018-08-07 - 2018-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Graduate School of IST M Bldg., M151 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2018-08-SDM-ICD-IST 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs 
Sub Title (in English)  
Keyword(1) Variability  
Keyword(2) Subthreshold Slope  
Keyword(3) Temperature  
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1st Author's Name Shuang Gao  
1st Author's Affiliation The University of Tokyo (Univ. Tokyo)
2nd Author's Name Tomoko Mizutani  
2nd Author's Affiliation The University of Tokyo (Univ. Tokyo)
3rd Author's Name Kiyoshi Takeuchi  
3rd Author's Affiliation The University of Tokyo (Univ. Tokyo)
4th Author's Name Masaharu Kobayashi  
4th Author's Affiliation The University of Tokyo (Univ. Tokyo)
5th Author's Name Toshiro Hiramoto  
5th Author's Affiliation The University of Tokyo (Univ. Tokyo)
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Speaker
Date Time 2018-08-08 09:45:00 
Presentation Time 25 
Registration for SDM 
Paper # SDM2018-37, ICD2018-24 
Volume (vol) 118 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.65-70 
#Pages
Date of Issue 2018-07-31 (SDM, ICD) 


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