Paper Abstract and Keywords |
Presentation |
2018-10-17 16:35
[Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56 Link to ES Tech. Rep. Archives: SDM2018-56 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge-Sb-Te compounds (GST) are widely studied as practical phase change material (PCM). However, GST-based PCRAM shows high operation energy, and low data retention ability because of low thermal stability of its amorphous phase. Therefore, we are focusing on a new PCM of Cr2Ge2Te6 (CrGT) to replace GST. CrGT shows an inverse resistance change between low-resistance amorphous and high-resistance crystalline phases which is totally different from conventional PCMs. In this study, the memory operation properties of CrGT-based PCRAM were investigated. It was found that the operation energy of CrGT-based PCRAM is more than 90% lower than that of GST-based PCRAM and its operation speed is faster than GST-based PCRAM. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
phase change memory / phase change material / amorphous / crystallization / Cr-Ge-Te / inverse resistance change / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 241, SDM2018-56, pp. 21-26, Oct. 2018. |
Paper # |
SDM2018-56 |
Date of Issue |
2018-10-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2018-56 Link to ES Tech. Rep. Archives: SDM2018-56 |
Conference Information |
Committee |
SDM |
Conference Date |
2018-10-17 - 2018-10-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2018-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States |
Sub Title (in English) |
|
Keyword(1) |
phase change memory |
Keyword(2) |
phase change material |
Keyword(3) |
amorphous |
Keyword(4) |
crystallization |
Keyword(5) |
Cr-Ge-Te |
Keyword(6) |
inverse resistance change |
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Shogo Hatayama |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Yuji Sutou |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Daisuke Ando |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Junichi Koike |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2018-10-17 16:35:00 |
Presentation Time |
50 minutes |
Registration for |
SDM |
Paper # |
SDM2018-56 |
Volume (vol) |
vol.118 |
Number (no) |
no.241 |
Page |
pp.21-26 |
#Pages |
6 |
Date of Issue |
2018-10-10 (SDM) |
|