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Presentation 2018-10-17 16:35
[Invited Talk] Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States
Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56 Link to ES Tech. Rep. Archives: SDM2018-56
Abstract (in Japanese) (See Japanese page) 
(in English) Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge-Sb-Te compounds (GST) are widely studied as practical phase change material (PCM). However, GST-based PCRAM shows high operation energy, and low data retention ability because of low thermal stability of its amorphous phase. Therefore, we are focusing on a new PCM of Cr2Ge2Te6 (CrGT) to replace GST. CrGT shows an inverse resistance change between low-resistance amorphous and high-resistance crystalline phases which is totally different from conventional PCMs. In this study, the memory operation properties of CrGT-based PCRAM were investigated. It was found that the operation energy of CrGT-based PCRAM is more than 90% lower than that of GST-based PCRAM and its operation speed is faster than GST-based PCRAM.
Keyword (in Japanese) (See Japanese page) 
(in English) phase change memory / phase change material / amorphous / crystallization / Cr-Ge-Te / inverse resistance change / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 241, SDM2018-56, pp. 21-26, Oct. 2018.
Paper # SDM2018-56 
Date of Issue 2018-10-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-56 Link to ES Tech. Rep. Archives: SDM2018-56

Conference Information
Committee SDM  
Conference Date 2018-10-17 - 2018-10-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2018-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States 
Sub Title (in English)  
Keyword(1) phase change memory  
Keyword(2) phase change material  
Keyword(3) amorphous  
Keyword(4) crystallization  
Keyword(5) Cr-Ge-Te  
Keyword(6) inverse resistance change  
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Keyword(8)  
1st Author's Name Shogo Hatayama  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Yuji Sutou  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Daisuke Ando  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Junichi Koike  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2018-10-17 16:35:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2018-56 
Volume (vol) vol.118 
Number (no) no.241 
Page pp.21-26 
#Pages
Date of Issue 2018-10-10 (SDM) 


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