Paper Abstract and Keywords |
Presentation |
2018-11-02 14:25
Thermal stability of silicon and nitrogen doped DLC thin films Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52 Link to ES Tech. Rep. Archives: CPM2018-52 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (Si-N-DLC) films, which were prepared by plasma-enhanced chemical vapor deposition using H_(2) as a dilution gas and compared the properties of the Si-N-DLC films with those of nitrogen doped DLC (N-DLC) films. We found that the clustering of sp^(2) carbon atoms was accelerated for the N-DLC films by post-annealing in a vacuum at a temperature of 420ºC or above, whereas the sp^(2) C clustering was almost suppressed for the Si-N-DLC films. It was also found that the amount of bound hydrogen in the Si-N-DLC films obviously increased after annealing at temperatures of 420 to 490ºC. The Si-N-DLC films had higher optical bands than the N-DLC films, and the optical band gap of the Si-N-DLC films remained almost unchanged after annealing even at 490ºC. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Diamond-like carbon / Plasma-enhanced chemical vapor deposition / Silicon / Nitrogen / Post-annealing / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 276, CPM2018-52, pp. 99-104, Nov. 2018. |
Paper # |
CPM2018-52 |
Date of Issue |
2018-10-25 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2018-52 Link to ES Tech. Rep. Archives: CPM2018-52 |
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