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| Presentation | 2019-01-17 15:00 Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.)  ED2018-77 MW2018-144 Link to ES Tech. Rep. Archives: ED2018-77 MW2018-144 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN interface. Contact resistance was strongly affected by pit morphology, and it could be roughly explained by assuming the pit structure as a parallel circuit. InAlGaN/GaN HEMT with pit-assisted ohmic contact shows low contact resistance of 0.38 Ω・mm with less variation, and exhibited improved DC characteristics. It can be concluded that the pit-assisted ohmic contact is a cost-effective practical technique to obtain a low contact resistance from a low temperature annealing. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HEMT / Power Amplifier / Millimeter wave / InAlGaN / Ohmic / Contact resistance / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 402, ED2018-77, pp. 51-54, Jan. 2019. | |
| Paper # | ED2018-77 | |
| Date of Issue | 2019-01-10 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2018-77 MW2018-144 Link to ES Tech. Rep. Archives: ED2018-77 MW2018-144 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2019-01-17 - 2019-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hitachi, Central Research Lab. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2019-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | HEMT |
| Keyword(2) | Power Amplifier |
| Keyword(3) | Millimeter wave |
| Keyword(4) | InAlGaN |
| Keyword(5) | Ohmic |
| Keyword(6) | Contact resistance |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yusuke Kumazaki |
| 1st Author's Affiliation | FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.) |
| 2nd Author's Name | Shiro Ozaki |
| 2nd Author's Affiliation | FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.) |
| 3rd Author's Name | Yuichi Minoura |
| 3rd Author's Affiliation | FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.) |
| 4th Author's Name | Kozo Makiyama |
| 4th Author's Affiliation | FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.) |
| 5th Author's Name | Toshihiro Ooki |
| 5th Author's Affiliation | FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.) |
| 6th Author's Name | Naoya Okamoto |
| 6th Author's Affiliation | FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.) |
| 7th Author's Name | Norikazu Nakamura |
| 7th Author's Affiliation | FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.) |
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| Speaker | Author-1 |
| Date Time | 2019-01-17 15:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2018-77, MW2018-144 |
| Volume (vol) | vol.118 |
| Number (no) | no.402(ED), no.403(MW) |
| Page | pp.51-54 |
| #Pages | 4 |
| Date of Issue | 2019-01-10 (ED, MW) |
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