Paper Abstract and Keywords |
Presentation |
2019-05-16 14:40
Characterizations of lattice strain and optical properties for Ge layers epitaxially grown on bonded Si-on-Quartz substrate Kyosuke Noguchi (Toyohashi Univ. Tech.), Michiharu Nishimura (Univ. Tokyo), Junji Matui, Yoshiyuki Tsusaka (Univ. Hyogo), Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-14 CPM2019-5 SDM2019-12 Link to ES Tech. Rep. Archives: ED2019-14 CPM2019-5 SDM2019-12 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge epitaxial layers on Si-on-insulator (SOI) wafer have been widely used for photodetectors operating in the C band (1.530 ~ 1.565 µm) as well as in the shorter-wavelength range of O band (1.260 ~ 1.360 µm), while an issue lies in a poor photodetection in the L band (1.565 ~ 1.625 µm). In this study, Ge layers grown on banded Si-on-quartz (SOQ) wafer show an increase in the optical absorption coefficient in the L band due to the reduction in the direct bandgap energy induced by an in-plane tensile strain. This property should be effective for high-efficiency photodetectors in the L band. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si photonics / Ge / optical absorption / lattice strain / L band / Si-on-quartz wafer / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 36, SDM2019-12, pp. 21-24, May 2019. |
Paper # |
SDM2019-12 |
Date of Issue |
2019-05-09 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2019-14 CPM2019-5 SDM2019-12 Link to ES Tech. Rep. Archives: ED2019-14 CPM2019-5 SDM2019-12 |
Conference Information |
Committee |
SDM ED CPM |
Conference Date |
2019-05-16 - 2019-05-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Shizuoka Univ. (Hamamatsu) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Materials, Fabrication, and Characterization of Functional Devices, and Related Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2019-05-SDM-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characterizations of lattice strain and optical properties for Ge layers epitaxially grown on bonded Si-on-Quartz substrate |
Sub Title (in English) |
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Keyword(1) |
Si photonics |
Keyword(2) |
Ge |
Keyword(3) |
optical absorption |
Keyword(4) |
lattice strain |
Keyword(5) |
L band |
Keyword(6) |
Si-on-quartz wafer |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Kyosuke Noguchi |
1st Author's Affiliation |
Toyohashi University of Technology (Toyohashi Univ. Tech.) |
2nd Author's Name |
Michiharu Nishimura |
2nd Author's Affiliation |
The University of Tokyo (Univ. Tokyo) |
3rd Author's Name |
Junji Matui |
3rd Author's Affiliation |
University of Hyogo (Univ. Hyogo) |
4th Author's Name |
Yoshiyuki Tsusaka |
4th Author's Affiliation |
University of Hyogo (Univ. Hyogo) |
5th Author's Name |
Yasuhiko Ishikawa |
5th Author's Affiliation |
Toyohashi University of Technology (Toyohashi Univ. Tech.) |
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Speaker |
Author-1 |
Date Time |
2019-05-16 14:40:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2019-14, CPM2019-5, SDM2019-12 |
Volume (vol) |
vol.119 |
Number (no) |
no.34(ED), no.35(CPM), no.36(SDM) |
Page |
pp.21-24 |
#Pages |
4 |
Date of Issue |
2019-05-09 (ED, CPM, SDM) |
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