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Paper Abstract and Keywords
Presentation 2019-06-21 11:20
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation
Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26 Link to ES Tech. Rep. Archives: SDM2019-26
Abstract (in Japanese) (See Japanese page) 
(in English) Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole than Si and Ge. For the practical application, it is essential to reduce the contact resistivity at the metal/n-type Ge1−xSnx interface down to as low as 10–9 Ω·cm2. To reduce the contact resistivity, heavily n-type doping in Ge1−xSnx is necessary whereas n-type dopants of Ge have low solid solubility limits and large diffusion coefficients. Recently, we achieved n+-Ge1−xSnx growth with a superior crystallinity and a high electron concentration of 1020 cm−3 by in-situ Sb doping under non-thermal equilibrium conditions. In this study, we succeeded the formation of Ni(Ge1−xSnx) on n+-Ge1−xSnx by the relatively low-temperature annealing at 350 ºC without Sn segregation. As a result, an ultra-low resistivity contact of n-type Ge1−xSnx as low as 10−9 Ω·cm2 was achieved with the Ni(Ge1−xSnx)/Sb-doped Ge0.935Sn0.065 sample with an electron concentration of 1.8×1020 cm−3.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge1-xSnx / Sb / n-type doping / contact resistivity / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 96, SDM2019-26, pp. 5-9, June 2019.
Paper # SDM2019-26 
Date of Issue 2019-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF SDM2019-26 Link to ES Tech. Rep. Archives: SDM2019-26

Conference Information
Committee SDM  
Conference Date 2019-06-21 - 2019-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2019-06-SDM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation 
Sub Title (in English)  
Keyword(1) Ge1-xSnx  
Keyword(2) Sb  
Keyword(3) n-type doping  
Keyword(4) contact resistivity  
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1st Author's Name Jihee Jeon  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Akihiro Suzuki  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Shigehisa Shibayama  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Shigeaki Zaima  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Osamu Nakatsuka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2019-06-21 11:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2019-26 
Volume (vol) vol.119 
Number (no) no.96 
Page pp.5-9 
#Pages
Date of Issue 2019-06-14 (SDM) 


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