Paper Abstract and Keywords |
Presentation |
2019-06-21 11:20
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26 Link to ES Tech. Rep. Archives: SDM2019-26 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole than Si and Ge. For the practical application, it is essential to reduce the contact resistivity at the metal/n-type Ge1−xSnx interface down to as low as 10–9 Ω·cm2. To reduce the contact resistivity, heavily n-type doping in Ge1−xSnx is necessary whereas n-type dopants of Ge have low solid solubility limits and large diffusion coefficients. Recently, we achieved n+-Ge1−xSnx growth with a superior crystallinity and a high electron concentration of 1020 cm−3 by in-situ Sb doping under non-thermal equilibrium conditions. In this study, we succeeded the formation of Ni(Ge1−xSnx) on n+-Ge1−xSnx by the relatively low-temperature annealing at 350 ºC without Sn segregation. As a result, an ultra-low resistivity contact of n-type Ge1−xSnx as low as 10−9 Ω·cm2 was achieved with the Ni(Ge1−xSnx)/Sb-doped Ge0.935Sn0.065 sample with an electron concentration of 1.8×1020 cm−3. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge1-xSnx / Sb / n-type doping / contact resistivity / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 96, SDM2019-26, pp. 5-9, June 2019. |
Paper # |
SDM2019-26 |
Date of Issue |
2019-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2019-26 Link to ES Tech. Rep. Archives: SDM2019-26 |
Conference Information |
Committee |
SDM |
Conference Date |
2019-06-21 - 2019-06-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Univ. VBL3F |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2019-06-SDM |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation |
Sub Title (in English) |
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Keyword(1) |
Ge1-xSnx |
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Sb |
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n-type doping |
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contact resistivity |
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1st Author's Name |
Jihee Jeon |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Akihiro Suzuki |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Shigehisa Shibayama |
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Nagoya University (Nagoya Univ.) |
4th Author's Name |
Shigeaki Zaima |
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Nagoya University (Nagoya Univ.) |
5th Author's Name |
Osamu Nakatsuka |
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Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2019-06-21 11:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2019-26 |
Volume (vol) |
vol.119 |
Number (no) |
no.96 |
Page |
pp.5-9 |
#Pages |
5 |
Date of Issue |
2019-06-14 (SDM) |
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