Paper Abstract and Keywords |
Presentation |
2019-06-21 14:30
[Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI) SDM2019-30 Link to ES Tech. Rep. Archives: SDM2019-30 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic structures of arsenic (As) atoms doped in a silicon (Si) crystal. Presence of the three types of As atomic structures were revealed; electrically active As occupying substitutional sites, electrically inactive As embedded in the AsnV(n=2~4) type clusters, and electrically inactive As in locally disordered structures. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
photoelectron holography / impurity / dopant / cluster / arsenic (As) / silicon (Si) / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 96, SDM2019-30, pp. 23-27, June 2019. |
Paper # |
SDM2019-30 |
Date of Issue |
2019-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2019-30 Link to ES Tech. Rep. Archives: SDM2019-30 |
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