Paper Abstract and Keywords |
Presentation |
2019-10-24 09:30
[Invited Talk]
NiAl as Cu alternative for ultrasmall feature sizes Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.) SDM2019-59 Link to ES Tech. Rep. Archives: SDM2019-59 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Conventional Cu interconnect will suffer from a great line resistivity increase due to aggressive downscaling of the dimensions of future large-scale-integrated (LSI) devices. In this report, the possibility of NiAl as a Cu alternative for highly scaled interconnections is investigated, with interfacial reaction, diffusion-barrier property, time-dependent-dielectric-breakdown (TDDB) reliability and thickness/linewidth-dependent resistivity change being examined. The results demonstrate that NiAl is a promising interconnect material that can be used without liner or barrier layer for linewidths below 7 nm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Interconnect / NiAl / Cu alternative / Liner- and Barrier-free / Reliability / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 239, SDM2019-59, pp. 29-33, Oct. 2019. |
Paper # |
SDM2019-59 |
Date of Issue |
2019-10-16 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2019-59 Link to ES Tech. Rep. Archives: SDM2019-59 |
Conference Information |
Committee |
SDM |
Conference Date |
2019-10-23 - 2019-10-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2019-10-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
NiAl as Cu alternative for ultrasmall feature sizes |
Sub Title (in English) |
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Keyword(1) |
Interconnect |
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NiAl |
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Cu alternative |
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Liner- and Barrier-free |
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Reliability |
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1st Author's Name |
Linghan Chen |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Junichi Koike |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Daisuke Ando |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Yuji Sutou |
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Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2019-10-24 09:30:00 |
Presentation Time |
50 minutes |
Registration for |
SDM |
Paper # |
SDM2019-59 |
Volume (vol) |
vol.119 |
Number (no) |
no.239 |
Page |
pp.29-33 |
#Pages |
5 |
Date of Issue |
2019-10-16 (SDM) |
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