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Paper Abstract and Keywords
Presentation 2019-10-24 09:30
[Invited Talk] NiAl as Cu alternative for ultrasmall feature sizes
Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.) SDM2019-59 Link to ES Tech. Rep. Archives: SDM2019-59
Abstract (in Japanese) (See Japanese page) 
(in English) Conventional Cu interconnect will suffer from a great line resistivity increase due to aggressive downscaling of the dimensions of future large-scale-integrated (LSI) devices. In this report, the possibility of NiAl as a Cu alternative for highly scaled interconnections is investigated, with interfacial reaction, diffusion-barrier property, time-dependent-dielectric-breakdown (TDDB) reliability and thickness/linewidth-dependent resistivity change being examined. The results demonstrate that NiAl is a promising interconnect material that can be used without liner or barrier layer for linewidths below 7 nm.
Keyword (in Japanese) (See Japanese page) 
(in English) Interconnect / NiAl / Cu alternative / Liner- and Barrier-free / Reliability / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 239, SDM2019-59, pp. 29-33, Oct. 2019.
Paper # SDM2019-59 
Date of Issue 2019-10-16 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-59 Link to ES Tech. Rep. Archives: SDM2019-59

Conference Information
Committee SDM  
Conference Date 2019-10-23 - 2019-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2019-10-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) NiAl as Cu alternative for ultrasmall feature sizes 
Sub Title (in English)  
Keyword(1) Interconnect  
Keyword(2) NiAl  
Keyword(3) Cu alternative  
Keyword(4) Liner- and Barrier-free  
Keyword(5) Reliability  
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1st Author's Name Linghan Chen  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Junichi Koike  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Daisuke Ando  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yuji Sutou  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2019-10-24 09:30:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2019-59 
Volume (vol) vol.119 
Number (no) no.239 
Page pp.29-33 
#Pages
Date of Issue 2019-10-16 (SDM) 


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