Paper Abstract and Keywords |
Presentation |
2019-11-14 17:30
6-10GHz Cryogenic GaAs pHEMT LNA MMIC Hayato Shimizu, Yudai Iwashita, Ryotaro Iwamoto (Kagoshima Univ.), Tamio Kawaguchi (Toshiba Corp.), Kenjiro Nishikawa (Kagoshima Univ.) MW2019-110 Link to ES Tech. Rep. Archives: MW2019-110 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper demonstrates a cryogenic broadband GaAs pHEMT LNA MMIC. The LNA was designed by using the modified GaAs pHEMT model, which includes the thermal characteristics of each device material. The MMIC was fabricated by using a commercial 0.25μm GaAs pHEMT process. The fabricated LNA MMIC achieved a noise figure of less than 0.3dB and an associated gain of over 15dB at 6-10 GHz. The corresponding return losses are better than 10dB. At 7GHz, the LNA realized a noise figure of 0.11dB (a noise temperature of7.7K) and an associated gain of 20dB. The power consumption is 25 mW. The MMIC size is 1.4mm x 1.0mm. These performances are the same level as those of LNAs at 10K-20K operation. |
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Reference Info. |
IEICE Tech. Rep., vol. 119, no. 292, MW2019-110, pp. 59-63, Nov. 2019. |
Paper # |
MW2019-110 |
Date of Issue |
2019-11-07 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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MW2019-110 Link to ES Tech. Rep. Archives: MW2019-110 |
Conference Information |
Committee |
MW |
Conference Date |
2019-11-14 - 2019-11-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Minami Daido Villa. Tamokuteki Koryu Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Microwave Technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2019-11-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
6-10GHz Cryogenic GaAs pHEMT LNA MMIC |
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1st Author's Name |
Hayato Shimizu |
1st Author's Affiliation |
Kagoshima University (Kagoshima Univ.) |
2nd Author's Name |
Yudai Iwashita |
2nd Author's Affiliation |
Kagoshima University (Kagoshima Univ.) |
3rd Author's Name |
Ryotaro Iwamoto |
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Kagoshima University (Kagoshima Univ.) |
4th Author's Name |
Tamio Kawaguchi |
4th Author's Affiliation |
Toshiba Corporation (Toshiba Corp.) |
5th Author's Name |
Kenjiro Nishikawa |
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Kagoshima University (Kagoshima Univ.) |
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Speaker |
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Date Time |
2019-11-14 17:30:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
MW2019-110 |
Volume (vol) |
vol.119 |
Number (no) |
no.292 |
Page |
pp.59-63 |
#Pages |
5 |
Date of Issue |
2019-11-07 (MW) |
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