IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2019-11-14 17:30
6-10GHz Cryogenic GaAs pHEMT LNA MMIC
Hayato Shimizu, Yudai Iwashita, Ryotaro Iwamoto (Kagoshima Univ.), Tamio Kawaguchi (Toshiba Corp.), Kenjiro Nishikawa (Kagoshima Univ.) MW2019-110 Link to ES Tech. Rep. Archives: MW2019-110
Abstract (in Japanese) (See Japanese page) 
(in English) This paper demonstrates a cryogenic broadband GaAs pHEMT LNA MMIC. The LNA was designed by using the modified GaAs pHEMT model, which includes the thermal characteristics of each device material. The MMIC was fabricated by using a commercial 0.25μm GaAs pHEMT process. The fabricated LNA MMIC achieved a noise figure of less than 0.3dB and an associated gain of over 15dB at 6-10 GHz. The corresponding return losses are better than 10dB. At 7GHz, the LNA realized a noise figure of 0.11dB (a noise temperature of7.7K) and an associated gain of 20dB. The power consumption is 25 mW. The MMIC size is 1.4mm x 1.0mm. These performances are the same level as those of LNAs at 10K-20K operation.
Keyword (in Japanese) (See Japanese page) 
(in English) / / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 292, MW2019-110, pp. 59-63, Nov. 2019.
Paper # MW2019-110 
Date of Issue 2019-11-07 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2019-110 Link to ES Tech. Rep. Archives: MW2019-110

Conference Information
Committee MW  
Conference Date 2019-11-14 - 2019-11-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Minami Daido Villa. Tamokuteki Koryu Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2019-11-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 6-10GHz Cryogenic GaAs pHEMT LNA MMIC 
Sub Title (in English)  
Keyword(1)  
Keyword(2)  
Keyword(3)  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hayato Shimizu  
1st Author's Affiliation Kagoshima University (Kagoshima Univ.)
2nd Author's Name Yudai Iwashita  
2nd Author's Affiliation Kagoshima University (Kagoshima Univ.)
3rd Author's Name Ryotaro Iwamoto  
3rd Author's Affiliation Kagoshima University (Kagoshima Univ.)
4th Author's Name Tamio Kawaguchi  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Kenjiro Nishikawa  
5th Author's Affiliation Kagoshima University (Kagoshima Univ.)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2019-11-14 17:30:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2019-110 
Volume (vol) vol.119 
Number (no) no.292 
Page pp.59-63 
#Pages
Date of Issue 2019-11-07 (MW) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan