Paper Abstract and Keywords |
Presentation |
2019-11-22 14:00
Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2019-56 CPM2019-75 LQE2019-99 Link to ES Tech. Rep. Archives: ED2019-56 CPM2019-75 LQE2019-99 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN is a mixed crystal of InN and GaN. Entire visible light range can be covered by changing their composition. Since the compositional fluctuation in the InGaN quantum well (QW) greatly affects the characteristics of optical devices, it is very important to understand the electronic structures of such fluctuated InGaN-QW systems for the improvement of their device characteristics. Mobility edge, which is the boundary energy between the localized and delocalized states, can be an index to evaluate the potential fluctuation of carriers. Several experiments, however, have been proposed to evaluate the mobility edge, and they give sometime different results each other. In this study, we experimentally and theoretically have studied on the evaluation method of mobility edge, and it was clarified that the estimation of mobility edge by PLE spectrum is the most suitable method. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN-QWs / Potential fluctuation / Optical characterization / Mobility edge / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 304, LQE2019-99, pp. 97-100, Nov. 2019. |
Paper # |
LQE2019-99 |
Date of Issue |
2019-11-14 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2019-56 CPM2019-75 LQE2019-99 Link to ES Tech. Rep. Archives: ED2019-56 CPM2019-75 LQE2019-99 |
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