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| Presentation | 2019-11-22 13:05 Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.)  ED2019-54 CPM2019-73 LQE2019-97 Link to ES Tech. Rep. Archives: ED2019-54 CPM2019-73 LQE2019-97 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Ultra-thin GaN/AlN quantum wells at a mono-molecular layer (ML) level are fabricated on vicinal AlN (0001) substrates with a tilt of 3 toward the [1bar{mathrm{1}}00] direction by metalorganic vapor phase epitaxy. On the surface after the growth, bunched ML steps (macro-steps) are observed. The photoluminescence (PL) spectra at low temperatures are composed of two components peaking at 5.5 and 5.0 eV. Referring to previous experimental and theoretical studies, we assign the former to 1 ML GaN QWs on atomically flat terraces and the latter to 2 ML GaN QWs at macro-steps. The PL spectrum at room temperature is dominated by the PL from the macro-step QWs. The ratio of PL intensity at RT against that at the lowest temperature is ~30%, which suggests high internal quantum efficiency. Time-resolved PL indicates that the improvement of the internal quantum efficiency is due to suppression of nonradiative recombination at room temperature. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN/AlN quantum wells / mono-molecular layer, / vicinal surface / self-limiting growth / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 304, LQE2019-97, pp. 89-92, Nov. 2019. | |
| Paper # | LQE2019-97 | |
| Date of Issue | 2019-11-14 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2019-54 CPM2019-73 LQE2019-97 Link to ES Tech. Rep. Archives: ED2019-54 CPM2019-73 LQE2019-97 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2019-11-21 - 2019-11-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ. (Hamamatsu) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2019-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes |
| Sub Title (in English) | |
| Keyword(1) | GaN/AlN quantum wells |
| Keyword(2) | mono-molecular layer, |
| Keyword(3) | vicinal surface |
| Keyword(4) | self-limiting growth |
| Keyword(5) | |
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| Keyword(8) | |
| 1st Author's Name | Mitsuru Funato |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Hirotsugu Kobayashi |
| 2nd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 3rd Author's Name | Yoichi Kawakami |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2019-11-22 13:05:00 |
| Presentation Time | 20 minutes |
| Registration for | LQE |
| Paper # | ED2019-54, CPM2019-73, LQE2019-97 |
| Volume (vol) | vol.119 |
| Number (no) | no.302(ED), no.303(CPM), no.304(LQE) |
| Page | pp.89-92 |
| #Pages | 4 |
| Date of Issue | 2019-11-14 (ED, CPM, LQE) |
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