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| Presentation | 2019-11-26 09:20 Feasibility Study of Variable Voltage Sources for IGBT Drive Circuits Kazuto Ura, Yoichi Ishizuka (Nagasaki Univ.)  EE2019-36 CPM2019-78 OME2019-22 Link to ES Tech. Rep. Archives: CPM2019-78 OME2019-22 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High-power / high-voltage converters are used in housings for industrial and automotive applications, and insulated gate bipolar transistors (IGBTs) are still the mainstream today as internal switching devices. In this paper, we propose a circuit that uses the voltage generated by the DC-DC converter as the voltage source of the IGBT gate drive circuit. The purpose is to improve IGBT reliability and electromagnetic interference (EMI) reduction by controlling the drive power supply and suppressing the voltage surge and reverse recovery current generated in driving the IGBT. It is confirmed whether or not the gate drive waveform of the IGBT can be controlled by simulation and experiment. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | IGBT / GaN / Gate Drive / Switching Characteristic / Double Pulse Test / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 309, EE2019-36, pp. 1-6, Nov. 2019. | |
| Paper # | EE2019-36 | |
| Date of Issue | 2019-11-19 (EE, CPM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EE2019-36 CPM2019-78 OME2019-22 Link to ES Tech. Rep. Archives: CPM2019-78 OME2019-22 |
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| Conference Information | |
| Committee | EE OME CPM |
| Conference Date | 2019-11-26 - 2019-11-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Japan Society for the Promotiton of Machine Industry |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EE |
| Conference Code | 2019-11-EE-OME-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Feasibility Study of Variable Voltage Sources for IGBT Drive Circuits |
| Sub Title (in English) | |
| Keyword(1) | IGBT |
| Keyword(2) | GaN |
| Keyword(3) | Gate Drive |
| Keyword(4) | Switching Characteristic |
| Keyword(5) | Double Pulse Test |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazuto Ura |
| 1st Author's Affiliation | Nagasaki University (Nagasaki Univ.) |
| 2nd Author's Name | Yoichi Ishizuka |
| 2nd Author's Affiliation | Nagasaki University (Nagasaki Univ.) |
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| Speaker | Author-1 |
| Date Time | 2019-11-26 09:20:00 |
| Presentation Time | 25 minutes |
| Registration for | EE |
| Paper # | EE2019-36, CPM2019-78, OME2019-22 |
| Volume (vol) | vol.119 |
| Number (no) | no.309(EE), no.310(CPM), no.311(OME) |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2019-11-19 (EE, CPM, OME) |
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