Paper Abstract and Keywords |
Presentation |
2019-12-23 16:45
GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 Link to ES Tech. Rep. Archives: ED2019-83 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. We used strained-Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer and AlInSb barrier layer with high Al content. As a result, the sheet electron density NS increases while keeping relatively high electron mobility µ compared with the Al0.25In0.75Sb/InSb HEMT which we fabricated previously. We obtained a cutoff frequency fT of 214 GHz for the 40-nm-gate HEMT and a maximum oscillation frequency fmax of 179 GHz for the 200-nm-gate HEMT. Furthermore, this novel GaInSb HEMT structure contributes to the reduction of gate leakage current as well as the increase of NS. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
High Electron Mobility Transistor / HEMT / GaInSb / InSb / Quantum well / Cutoff frequency / Maximum oscillation frequency / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 353, ED2019-83, pp. 29-32, Dec. 2019. |
Paper # |
ED2019-83 |
Date of Issue |
2019-12-16 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
ED2019-83 Link to ES Tech. Rep. Archives: ED2019-83 |