講演抄録/キーワード |
講演名 |
2019-12-23 14:30
層状半導体InSe結晶の低温液相成長とそのテラヘルツ光学特性 ○唐 超・佐藤陽平・渡辺克也・大崎淳也・田邉匡生・小山 裕(東北大) ED2019-79 エレソ技報アーカイブへのリンク:ED2019-79 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
Two-dimensional materials, including InSe and GaSe have attracted more and more attentions nowadays. The high quality InSe crystals have been successfully grown by the temperature difference method under controlled vapor pressure (TDM-CVP), in which the crystals can be prepared at the temperature far lower than their melting point. It is confirmed by characterizations such as Raman spectroscopy and X-ray diffraction that the as-grown crystals have favorable crystallinity, which may attribute to the low-temperature and static growth process. On the other hand, it is known that the GaSe is a typical nonlinear optic crystal used for frequency conversion. We analyzed the nonlinear optical coefficient theoretically by density function theory and confirmed the result in infrared range by second harmonic generation (SHG) experiments. The calculation matches to experiment exactly and also indicate that the InSe, with similar lattice structure with GaSe, also has potential of nonlinear optical application. Indeed, in our previous transmittance measurement on InSe using different frequency generation (DFG) terahertz light source, it was shown that the absorption in terahertz range of InSe was far smaller than that of GaSe. The present study has clarified the potential of InSe to be applied as nonlinear optical crystal for THz generation. |
キーワード |
(和) |
ファンデルワールス結晶 / インジウムセレンナイド / 結晶成長 / / / / / |
(英) |
Van der Waals Crystal / InSe / Crystal growth / / / / / |
文献情報 |
信学技報, vol. 119, no. 353, ED2019-79, pp. 13-15, 2019年12月. |
資料番号 |
ED2019-79 |
発行日 |
2019-12-16 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2019-79 エレソ技報アーカイブへのリンク:ED2019-79 |