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| Presentation | 2020-01-31 16:35 [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT)  ED2019-105 MW2019-139 Link to ES Tech. Rep. Archives: ED2019-105 MW2019-139 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected as key devices for ultra-high-speed wireless communications and expansion of radio spectrum sources in millimeter- and submillimeter-wave frequency band (30 GHz - 3 THz) because these devices can operate at a frequency over 100 GHz. We have improved device performances of GaN-based HEMTs with nanoscale gates ($L_{g}$ < 100 nm) and obtained a maximum oscillation frequency ($f_{max}$) of 287 GHz for an In$_{0.18}$Al$_{0.82}$N/AlN/GaN HEMT on GaN substrate. Moreover, we have also developing and setting a free-space method system for S-parameter measurement of materials to estimate their dielectric constants at millimeter- and submillimeter-wave frequencies, which are needed to design monolithic circuits operated at these frequencies. In this talk, we introduce details of the system and technology, and reported dielectric constants of InP wafer, PTFE (polytetrafluoroethylene) and PS (polystyrene) films measured in 60-220 GHz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | millimeter- and submillimeter-wave / GaN-HEMT / maximum oscillation frequency (fmax) / cutoff frequency (fT) / Free-space method for S-parameter measurement / dielectric constant / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 409, MW2019-139, pp. 59-64, Jan. 2020. | |
| Paper # | MW2019-139 | |
| Date of Issue | 2020-01-24 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2019-105 MW2019-139 Link to ES Tech. Rep. Archives: ED2019-105 MW2019-139 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2020-01-31 - 2020-01-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2020-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications |
| Sub Title (in English) | |
| Keyword(1) | millimeter- and submillimeter-wave |
| Keyword(2) | GaN-HEMT |
| Keyword(3) | maximum oscillation frequency (fmax) |
| Keyword(4) | cutoff frequency (fT) |
| Keyword(5) | Free-space method for S-parameter measurement |
| Keyword(6) | dielectric constant |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Issei Watanabe |
| 1st Author's Affiliation | National Institute of Info. & Com. Tech. (NICT) |
| 2nd Author's Name | Yoshimi Yamashita |
| 2nd Author's Affiliation | National Institute of Info. & Com. Tech. (NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Info. & Com. Tech. (NICT) |
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| Speaker | Author-1 |
| Date Time | 2020-01-31 16:35:00 |
| Presentation Time | 50 minutes |
| Registration for | MW |
| Paper # | ED2019-105, MW2019-139 |
| Volume (vol) | vol.119 |
| Number (no) | no.408(ED), no.409(MW) |
| Page | pp.59-64 |
| #Pages | 6 |
| Date of Issue | 2020-01-24 (ED, MW) |
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