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Paper Abstract and Keywords
Presentation 2020-04-13 15:20
[Invited Talk] Transistor application of polycrystalline Ge-based thin films
Kaoru Toko (Univ. of Tsukuba)
Abstract (in Japanese) (See Japanese page) 
(in English) With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great deal of attention to improve the performance of Si large-scale integrated circuits and mobile terminals. Here, accumulation mode TFTs are fabricated at low temperature (< 500 °C) based on high-mobility polycrystalline Ge layers formed by advanced solid-phase crystallization. The relationship between the crystal quality, electrical properties, and TFT characteristics is comprehensively discussed with the prospect of application to flexible TFTs.
Keyword (in Japanese) (See Japanese page) 
(in English) germanium / polycrystalline / thin film transistor / solid-phase crystallization / / / /  
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Conference Information
Committee SDM OME  
Conference Date 2020-04-13 - 2020-04-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. 
Paper Information
Registration To SDM 
Conference Code 2020-04-SDM-OME 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Transistor application of polycrystalline Ge-based thin films 
Sub Title (in English)  
Keyword(1) germanium  
Keyword(2) polycrystalline  
Keyword(3) thin film transistor  
Keyword(4) solid-phase crystallization  
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1st Author's Name Kaoru Toko  
1st Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
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Date Time 2020-04-13 15:20:00 
Presentation Time 30 minutes 
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