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| Presentation | 2020-08-07 11:00 CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC)  SDM2020-8 ICD2020-8 Link to ES Tech. Rep. Archives: SDM2020-8 ICD2020-8 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our laboratory. So far, we have reported that NMOS and PMOS have Steep SS in each of them. In this paper, we report the characterization of a CMOS inverter that combines NMOS and PMOS, for the first time. When the SS positions are superimposed, they are very steep and perpendicular, compared with the conventional SOI-CMOS case. The results show that the transfer characteristics of the PNBT-SOI FETs are very good. This is an interesting result confirmed by the PNBT-SOI FETs because they have an ideal steep SS. A large voltage gain of about 78 dB was found with an input voltage step 100µv. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CMOS Inverter / SOI / Steep Subthreshold Slope / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 126, SDM2020-8, pp. 37-40, Aug. 2020. | |
| Paper # | SDM2020-8 | |
| Date of Issue | 2020-07-30 (SDM, ICD) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2020-8 ICD2020-8 Link to ES Tech. Rep. Archives: SDM2020-8 ICD2020-8 |
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| Conference Information | |
| Committee | ICD SDM ITE-IST |
| Conference Date | 2020-08-06 - 2020-08-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2020-08-ICD-SDM-IST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” |
| Sub Title (in English) | |
| Keyword(1) | CMOS Inverter |
| Keyword(2) | SOI |
| Keyword(3) | Steep Subthreshold Slope |
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| Keyword(8) | |
| 1st Author's Name | Shota Ishiguro |
| 1st Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 2nd Author's Name | Jiro Ida |
| 2nd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 3rd Author's Name | Takayuki Mori |
| 3rd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 4th Author's Name | Koichiro Ishibashi |
| 4th Author's Affiliation | The University of Electro-Communications (UEC) |
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| Speaker | Author-1 |
| Date Time | 2020-08-07 11:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2020-8, ICD2020-8 |
| Volume (vol) | vol.120 |
| Number (no) | no.126(SDM), no.127(ICD) |
| Page | pp.37-40 |
| #Pages | 4 |
| Date of Issue | 2020-07-30 (SDM, ICD) |
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