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| Presentation | 2020-11-05 15:45 Resonant frequency shift and lattice strain of AlN and ScAlN SMR during DC bias voltage application caused by nonlinear effect Takumi Saotome, Takahiko Yanagitani (Waseda Univ.)  US2020-49 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Mobile communication device requires high power operation. Nonlinear signals such as second harmonic (H2) generation (SHG) is not negligible for recent BAW filter applications. It is well known that the change of resonant frequency during DC bias voltage application is related to SHG. Also, the DC voltage application induces the change of lattice strains and elastic stiffness in piezoelectric crystals. In this study, we estimated the change of resonant frequency and inverse dielectric constants during DC bias voltage application in the AlN and ScAlN SMR. Moreover, we investigated the change of lattice strain under DC bias using XRD. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ScAlN / SMR / latiice strain / DC bias / XRD / H2 / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 222, US2020-49, pp. 34-39, Nov. 2020. | |
| Paper # | US2020-49 | |
| Date of Issue | 2020-10-29 (US) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | US2020-49 |
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| Conference Information | |
| Committee | US |
| Conference Date | 2020-11-05 - 2020-11-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | US |
| Conference Code | 2020-11-US |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Resonant frequency shift and lattice strain of AlN and ScAlN SMR during DC bias voltage application caused by nonlinear effect |
| Sub Title (in English) | |
| Keyword(1) | ScAlN |
| Keyword(2) | SMR |
| Keyword(3) | latiice strain |
| Keyword(4) | DC bias |
| Keyword(5) | XRD |
| Keyword(6) | H2 |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takumi Saotome |
| 1st Author's Affiliation | Waseda University (Waseda Univ.) |
| 2nd Author's Name | Takahiko Yanagitani |
| 2nd Author's Affiliation | Waseda University (Waseda Univ.) |
| 3rd Author's Name | |
| 3rd Author's Affiliation | () |
| 4th Author's Name | |
| 4th Author's Affiliation | () |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2020-11-05 15:45:00 |
| Presentation Time | 25 minutes |
| Registration for | US |
| Paper # | US2020-49 |
| Volume (vol) | vol.120 |
| Number (no) | no.222 |
| Page | pp.34-39 |
| #Pages | 6 |
| Date of Issue | 2020-10-29 (US) |
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