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Paper Abstract and Keywords
Presentation 2020-11-05 15:45
Resonant frequency shift and lattice strain of AlN and ScAlN SMR during DC bias voltage application caused by nonlinear effect
Takumi Saotome, Takahiko Yanagitani (Waseda Univ.) US2020-49
Abstract (in Japanese) (See Japanese page) 
(in English) Mobile communication device requires high power operation. Nonlinear signals such as second harmonic (H2) generation (SHG) is not negligible for recent BAW filter applications. It is well known that the change of resonant frequency during DC bias voltage application is related to SHG. Also, the DC voltage application induces the change of lattice strains and elastic stiffness in piezoelectric crystals. In this study, we estimated the change of resonant frequency and inverse dielectric constants during DC bias voltage application in the AlN and ScAlN SMR. Moreover, we investigated the change of lattice strain under DC bias using XRD.
Keyword (in Japanese) (See Japanese page) 
(in English) ScAlN / SMR / latiice strain / DC bias / XRD / H2 / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 222, US2020-49, pp. 34-39, Nov. 2020.
Paper # US2020-49 
Date of Issue 2020-10-29 (US) 
ISSN Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee US  
Conference Date 2020-11-05 - 2020-11-05 
Place (in Japanese) (See Japanese page) 
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Paper Information
Registration To US 
Conference Code 2020-11-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Resonant frequency shift and lattice strain of AlN and ScAlN SMR during DC bias voltage application caused by nonlinear effect 
Sub Title (in English)  
Keyword(1) ScAlN  
Keyword(2) SMR  
Keyword(3) latiice strain  
Keyword(4) DC bias  
Keyword(5) XRD  
Keyword(6) H2  
1st Author's Name Takumi Saotome  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Takahiko Yanagitani  
2nd Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2020-11-05 15:45:00 
Presentation Time 25 minutes 
Registration for US 
Paper # US2020-49 
Volume (vol) vol.120 
Number (no) no.222 
Page pp.34-39 
Date of Issue 2020-10-29 (US) 

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