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Paper Abstract and Keywords
Presentation 2020-11-19 16:20
A model of dark current mechanism in barrier infrared photodetectors
Yen Le Thi (Hanoi University of Science and Technology), Yoshinari Kamakura (Osaka Institute of Technology), Nobuya Mori (Graduate School of Engineering, Osaka University,) SDM2020-27 Link to ES Tech. Rep. Archives: SDM2020-27
Abstract (in Japanese) (See Japanese page) 
(in English) The barrier infrared detector fabricated with InAs/GaSb type-II superlattice emerges as a solution to a significant reduction in dark current compared to conventional p-i-n photodetectors. In this study, the barrier photodetectors composed of a contact layer, a barrier layer, and an active region (n-type) are evaluated by simulating the two different engineered structures, i.e., pBn and nBn. Numerical simulation results suggest that both structures could be used to reduce the dark current and there exists optimum doping density. We discuss the physical mechanisms behind the observed characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) infrared photodetector / superlattice / dark current / / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 239, SDM2020-27, pp. 25-27, Nov. 2020.
Paper # SDM2020-27 
Date of Issue 2020-11-12 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2020-27 Link to ES Tech. Rep. Archives: SDM2020-27

Conference Information
Committee SDM  
Conference Date 2020-11-19 - 2020-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2020-11-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A model of dark current mechanism in barrier infrared photodetectors 
Sub Title (in English)  
Keyword(1) infrared photodetector  
Keyword(2) superlattice  
Keyword(3) dark current  
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1st Author's Name Yen Le Thi  
1st Author's Affiliation Hanoi University of Science and Technology (Hanoi University of Science and Technology)
2nd Author's Name Yoshinari Kamakura  
2nd Author's Affiliation Osaka Institute of Technology (Osaka Institute of Technology)
3rd Author's Name Nobuya Mori  
3rd Author's Affiliation Graduate School of Engineering, Osaka University, (Graduate School of Engineering, Osaka University,)
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Speaker Author-1 
Date Time 2020-11-19 16:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2020-27 
Volume (vol) vol.120 
Number (no) no.239 
Page pp.25-27 
#Pages
Date of Issue 2020-11-12 (SDM) 


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