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Presentation 2020-11-27 14:10
First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure
Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.) ED2020-21 CPM2020-42 LQE2020-72 Link to ES Tech. Rep. Archives: ED2020-21 CPM2020-42 LQE2020-72
Abstract (in Japanese) (See Japanese page) 
(in English) Nitride semiconductors such as GaN and AlN have strong optical nonlinearity, and they can be applied to nonlinear optical devices. 200-nm band deep UV light and 800-nm band squeezed light can be obtained from such devices pumped by 400-nm band InGaN QW single-mode lasers. In order to pump the high-efficiency wavelength conversion devices having a narrow wavelength bandwidth, wavelength tunable single-mode lasers are required. In this work, we design and fabricate an InGaN single-mode laser with a periodically slotted structure, and demonstrate wavelength tunable single-mode lasing by current injection to the periodic structures.
Keyword (in Japanese) (See Japanese page) 
(in English) Nitride semiconductors / Semiconductor lasers / Wavelength tuning / Single-mode lasers / Slotted lasers / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 256, LQE2020-72, pp. 79-82, Nov. 2020.
Paper # LQE2020-72 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2020-21 CPM2020-42 LQE2020-72 Link to ES Tech. Rep. Archives: ED2020-21 CPM2020-42 LQE2020-72

Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure 
Sub Title (in English)  
Keyword(1) Nitride semiconductors  
Keyword(2) Semiconductor lasers  
Keyword(3) Wavelength tuning  
Keyword(4) Single-mode lasers  
Keyword(5) Slotted lasers  
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1st Author's Name Masahiro Uemukai  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Akihiro Higuchi  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Tomoyuki Tanikawa  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Ryuji Katayama  
4th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2020-11-27 14:10:00 
Presentation Time 20 minutes 
Registration for LQE 
Paper # ED2020-21, CPM2020-42, LQE2020-72 
Volume (vol) vol.120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.79-82 
#Pages
Date of Issue 2020-11-19 (ED, CPM, LQE) 


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