Paper Abstract and Keywords |
Presentation |
2020-11-27 14:10
First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.) ED2020-21 CPM2020-42 LQE2020-72 Link to ES Tech. Rep. Archives: ED2020-21 CPM2020-42 LQE2020-72 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity, and they can be applied to nonlinear optical devices. 200-nm band deep UV light and 800-nm band squeezed light can be obtained from such devices pumped by 400-nm band InGaN QW single-mode lasers. In order to pump the high-efficiency wavelength conversion devices having a narrow wavelength bandwidth, wavelength tunable single-mode lasers are required. In this work, we design and fabricate an InGaN single-mode laser with a periodically slotted structure, and demonstrate wavelength tunable single-mode lasing by current injection to the periodic structures. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Nitride semiconductors / Semiconductor lasers / Wavelength tuning / Single-mode lasers / Slotted lasers / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 256, LQE2020-72, pp. 79-82, Nov. 2020. |
Paper # |
LQE2020-72 |
Date of Issue |
2020-11-19 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2020-21 CPM2020-42 LQE2020-72 Link to ES Tech. Rep. Archives: ED2020-21 CPM2020-42 LQE2020-72 |
Conference Information |
Committee |
LQE CPM ED |
Conference Date |
2020-11-26 - 2020-11-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2020-11-LQE-CPM-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure |
Sub Title (in English) |
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Keyword(1) |
Nitride semiconductors |
Keyword(2) |
Semiconductor lasers |
Keyword(3) |
Wavelength tuning |
Keyword(4) |
Single-mode lasers |
Keyword(5) |
Slotted lasers |
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1st Author's Name |
Masahiro Uemukai |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Akihiro Higuchi |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Tomoyuki Tanikawa |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
4th Author's Name |
Ryuji Katayama |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2020-11-27 14:10:00 |
Presentation Time |
20 minutes |
Registration for |
LQE |
Paper # |
ED2020-21, CPM2020-42, LQE2020-72 |
Volume (vol) |
vol.120 |
Number (no) |
no.254(ED), no.255(CPM), no.256(LQE) |
Page |
pp.79-82 |
#Pages |
4 |
Date of Issue |
2020-11-19 (ED, CPM, LQE) |
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