Paper Abstract and Keywords |
Presentation |
2020-12-04 15:50
Fundamental Evaluation of Impedance Variations in the Connector Caused by High-Frequency Noise Propagation Hiroyuki Ueda, Shugo Kaji, Youngwoo Kim, Daisuke Fujimoto (NAIST), Taiki Kitazawa, Takashi Kasuga (NIT,Nagano College)), Yuichi Hayashi (NAIST) EMD2020-24 Link to ES Tech. Rep. Archives: EMD2020-24 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
As the operating frequency of information devices increases, the noise generated by the device is also becoming broadband. Propagation of the broadband noise to connectors used for the interconnection of information devices causes electromagnetic (EM) radiation and degrades the immunity of the device, which affects the EM environment. Previous reports have evaluated the degradation of the EM environment by focusing on the part where impedance mismatched caused by aging and contact failure at the contact boundary of the connector. These reports show that the propagation of high-frequency signals to the contact boundary of the mismatched connector causes an increase in unintentional EM radiation and degrades the device immunity. On the other hand, in this paper, we evaluate the possibility of the EM environment degradation caused by the noise propagation including off-standard high-frequency to connectors that have a good contact condition, by observing impacts of the parasitic components to the electrical performance of the connector. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Time domain reflectometry / TDR / high-frequency noise / parasitic components / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 275, EMD2020-24, pp. 34-38, Dec. 2020. |
Paper # |
EMD2020-24 |
Date of Issue |
2020-11-27 (EMD) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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EMD2020-24 Link to ES Tech. Rep. Archives: EMD2020-24 |
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