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Presentation 2020-12-04 15:50
Fundamental Evaluation of Impedance Variations in the Connector Caused by High-Frequency Noise Propagation
Hiroyuki Ueda, Shugo Kaji, Youngwoo Kim, Daisuke Fujimoto (NAIST), Taiki Kitazawa, Takashi Kasuga (NIT,Nagano College)), Yuichi Hayashi (NAIST) EMD2020-24 Link to ES Tech. Rep. Archives: EMD2020-24
Abstract (in Japanese) (See Japanese page) 
(in English) As the operating frequency of information devices increases, the noise generated by the device is also becoming broadband. Propagation of the broadband noise to connectors used for the interconnection of information devices causes electromagnetic (EM) radiation and degrades the immunity of the device, which affects the EM environment. Previous reports have evaluated the degradation of the EM environment by focusing on the part where impedance mismatched caused by aging and contact failure at the contact boundary of the connector. These reports show that the propagation of high-frequency signals to the contact boundary of the mismatched connector causes an increase in unintentional EM radiation and degrades the device immunity. On the other hand, in this paper, we evaluate the possibility of the EM environment degradation caused by the noise propagation including off-standard high-frequency to connectors that have a good contact condition, by observing impacts of the parasitic components to the electrical performance of the connector.
Keyword (in Japanese) (See Japanese page) 
(in English) Time domain reflectometry / TDR / high-frequency noise / parasitic components / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 275, EMD2020-24, pp. 34-38, Dec. 2020.
Paper # EMD2020-24 
Date of Issue 2020-11-27 (EMD) 
ISSN Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EMD2020-24 Link to ES Tech. Rep. Archives: EMD2020-24

Conference Information
Committee EMD  
Conference Date 2020-12-04 - 2020-12-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) International Session IS-EMD2020 
Paper Information
Registration To EMD 
Conference Code 2020-12-EMD 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fundamental Evaluation of Impedance Variations in the Connector Caused by High-Frequency Noise Propagation 
Sub Title (in English)  
Keyword(1) Time domain reflectometry  
Keyword(2) TDR  
Keyword(3) high-frequency noise  
Keyword(4) parasitic components  
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1st Author's Name Hiroyuki Ueda  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Shugo Kaji  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Youngwoo Kim  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Daisuke Fujimoto  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Taiki Kitazawa  
5th Author's Affiliation National Institute of Technology, Nagano College (NIT,Nagano College))
6th Author's Name Takashi Kasuga  
6th Author's Affiliation National Institute of Technology, Nagano College (NIT,Nagano College))
7th Author's Name Yuichi Hayashi  
7th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2020-12-04 15:50:00 
Presentation Time 25 minutes 
Registration for EMD 
Paper # EMD2020-24 
Volume (vol) vol.120 
Number (no) no.275 
Page pp.34-38 
#Pages
Date of Issue 2020-11-27 (EMD) 


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