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Paper Abstract and Keywords
Presentation 2021-01-19 13:30
Thermal Conductance of Tri-layer Membranes for Multi-Pixel Gamma-Ray Transition Edge Sensors
Takahiro Kikuchi, Satoshi Kohjiro, Ryota Hayakawa, Go Fujii, Fuminori Hirayama, Masahiro Ukibe (AIST), Ryan Smith, Masashi Ohno (U-Tokyo) SCE2020-18
Abstract (in Japanese) (See Japanese page) 
(in English) We have been developing the Gamma-ray Transition Edge Sensors (TESs) which is able to achieve high energy resolution. Multi-pixel TESs are expected to increase count rate obtained by the conventional single pixel. To operate the multi-pixel TESs, characteristics on every pixels should be uniform. Thermal conductance of silicon-nitride (SixNy) membrane has been studied by many institutes in ages. They have adopted the SixNy membranes for TESs. However, the thin SixNy membrane has possibility to cause the space distribution of its thickness and stress due to inevitable space-distribution of etching speed of the silicon (Si) substrate by Deep Reactive Ion Etching (D-RIE). It is resulting in non-uniform characteristics among pixels. Silicon dioxide (SiO2) has been known to have stronger tolerance against the etching plasma. We have been fabricating the tri-layer membrane (SiO2/SixNy/SiO2) to overcome this problem. Total thickness of this tri-layer membrane is set to be about 7 um for adjusting membrane stress. The tri-layer membrane has been expected to have strong mechanical strength. Thermal conductance of the tri-layer membrane was ~1 nW/K although it was thicker than that of typical SixNy membrane thickness (~1 um). We confirmed that critical temperature of TES was not changed after D-RIE. This result means that the tri-layer membrane protects the superconducting film. Analyzing the membrane size dependence of joule power which needs to operate the TESs, we found thermal transport of phonons passing through the tri-layer membrane was between “ballistic” and “diffusive” regimes. The phonon-mean-free-path was about 1 um.
Keyword (in Japanese) (See Japanese page) 
(in English) Gamma Ray / Membrane / Thermal Conductance / SixNy / SiO2 / Transition Edge Sensor / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 313, SCE2020-18, pp. 7-12, Jan. 2021.
Paper # SCE2020-18 
Date of Issue 2021-01-12 (SCE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SCE  
Conference Date 2021-01-19 - 2021-01-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SCE 
Conference Code 2021-01-SCE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Thermal Conductance of Tri-layer Membranes for Multi-Pixel Gamma-Ray Transition Edge Sensors 
Sub Title (in English)  
Keyword(1) Gamma Ray  
Keyword(2) Membrane  
Keyword(3) Thermal Conductance  
Keyword(4) SixNy  
Keyword(5) SiO2  
Keyword(6) Transition Edge Sensor  
Keyword(7)  
Keyword(8)  
1st Author's Name Takahiro Kikuchi  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Satoshi Kohjiro  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Ryota Hayakawa  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Go Fujii  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Fuminori Hirayama  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Masahiro Ukibe  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Ryan Smith  
7th Author's Affiliation University of Tokyo (U-Tokyo)
8th Author's Name Masashi Ohno  
8th Author's Affiliation University of Tokyo (U-Tokyo)
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Speaker Author-1 
Date Time 2021-01-19 13:30:00 
Presentation Time 25 minutes 
Registration for SCE 
Paper # SCE2020-18 
Volume (vol) vol.120 
Number (no) no.313 
Page pp.7-12 
#Pages
Date of Issue 2021-01-12 (SCE) 


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