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| Presentation | 2021-01-28 16:05 [Invited Talk] Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo)  SDM2020-54 Link to ES Tech. Rep. Archives: SDM2020-54 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | There has been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness fluctuation scattering and (3) Many interface traps. We have proposed that the combination of (111) surface orientation and Ultra-Thin-Body InAs-On-Insulator (InAs-OI) channels can solve these problems because the strong quantization causes the electron transition from the Γ to L valley, resulting in the high semiconductor capacitance and the suppression of thickness fluctuation scattering thanks to the heavy confinement mass in the L valley. We also experimentally demonstrated the InAs-OI nMOSFET with the channel thickness down to 3 nm, which has the excellent cut-off characteristics and the mobility enhancement with channel thickness scaling due to L valley transition as proposed. We have applied a novel self-consistent Hall-QSCV method to accurately evaluate the interface trap density inside the InAs conduction band, resulting in the lower Dit than those of InGaAs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InAs-On-Insulator / MOSFET / Ultra-Thin-Body / Subband / Thickness fluctuation scattering / Interface traps / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 352, SDM2020-54, pp. 21-24, Jan. 2021. | |
| Paper # | SDM2020-54 | |
| Date of Issue | 2021-01-21 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2020-54 Link to ES Tech. Rep. Archives: SDM2020-54 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2021-01-28 - 2021-01-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2021-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | InAs-On-Insulator |
| Keyword(2) | MOSFET |
| Keyword(3) | Ultra-Thin-Body |
| Keyword(4) | Subband |
| Keyword(5) | Thickness fluctuation scattering |
| Keyword(6) | Interface traps |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kei Sumita |
| 1st Author's Affiliation | University of Tokyo (Univ.of Tokyo) |
| 2nd Author's Name | Kasidit Toprasertpong |
| 2nd Author's Affiliation | University of Tokyo (Univ.of Tokyo) |
| 3rd Author's Name | Mitsuru Takenaka |
| 3rd Author's Affiliation | University of Tokyo (Univ.of Tokyo) |
| 4th Author's Name | Shinich Takagi |
| 4th Author's Affiliation | University of Tokyo (Univ.of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2021-01-28 16:05:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2020-54 |
| Volume (vol) | vol.120 |
| Number (no) | no.352 |
| Page | pp.21-24 |
| #Pages | 4 |
| Date of Issue | 2021-01-21 (SDM) |
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