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Paper Abstract and Keywords
Presentation 2021-07-20 09:55
Consideration of dominant switching timing separation on radiated noise using SiC MOSFET half bridge
Toshiya Tadakuma (Kyushu Univ.), Yuki Matsutaka, Shin Suzuki, Motonobu Joko (Mitsubishi Electric), Masahito Shoyama (Kyushu Univ.) EE2021-11
Abstract (in Japanese) (See Japanese page) 
(in English) Improving characteristics of power devices are indispensable for improving power electronics technology, and the evolution of low-loss devices is essential for effective use of resources. However, in order to reduce switching loss, it is inevitable to increase the switching speed, and it is expected that power electronics products will be optimized while considering conflicting noise standards. For efficient design, some designers would like to grasp the tendency of radiated noise in advance, but in general, it is often estimated from the voltage and current waveforms obtained by the double pulse test and the calculated values. Therefore, this article will propose an idea of an extended double pulse test that enables a double pulse test in anechoic chamber to grasp the timing of radiated noise generation and its magnitude, and to include the radiated noise current dependency in the conventional switching characteristics using the configuration of the half-bridge circuit of SiC MOSFET.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / MOSFET / Power device / Radiated noise / EMI / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 124, EE2021-11, pp. 21-25, July 2021.
Paper # EE2021-11 
Date of Issue 2021-07-12 (EE) 
ISSN Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EE2021-11

Conference Information
Committee EE IEE-SPC  
Conference Date 2021-07-19 - 2021-07-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2021-07-EE-SPC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Consideration of dominant switching timing separation on radiated noise using SiC MOSFET half bridge 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) MOSFET  
Keyword(3) Power device  
Keyword(4) Radiated noise  
Keyword(5) EMI  
1st Author's Name Toshiya Tadakuma  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Yuki Matsutaka  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Shin Suzuki  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
4th Author's Name Motonobu Joko  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
5th Author's Name Masahito Shoyama  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2021-07-20 09:55:00 
Presentation Time 25 minutes 
Registration for EE 
Paper # EE2021-11 
Volume (vol) vol.121 
Number (no) no.124 
Page pp.21-25 
Date of Issue 2021-07-12 (EE) 

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