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| Presentation | 2021-07-20 09:55 Consideration of dominant switching timing separation on radiated noise using SiC MOSFET half bridge Toshiya Tadakuma (Kyushu Univ.), Yuki Matsutaka, Shin Suzuki, Motonobu Joko (Mitsubishi Electric), Masahito Shoyama (Kyushu Univ.)  EE2021-11 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Improving characteristics of power devices are indispensable for improving power electronics technology, and the evolution of low-loss devices is essential for effective use of resources. However, in order to reduce switching loss, it is inevitable to increase the switching speed, and it is expected that power electronics products will be optimized while considering conflicting noise standards. For efficient design, some designers would like to grasp the tendency of radiated noise in advance, but in general, it is often estimated from the voltage and current waveforms obtained by the double pulse test and the calculated values. Therefore, this article will propose an idea of an extended double pulse test that enables a double pulse test in anechoic chamber to grasp the timing of radiated noise generation and its magnitude, and to include the radiated noise current dependency in the conventional switching characteristics using the configuration of the half-bridge circuit of SiC MOSFET. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / MOSFET / Power device / Radiated noise / EMI / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 124, EE2021-11, pp. 21-25, July 2021. | |
| Paper # | EE2021-11 | |
| Date of Issue | 2021-07-12 (EE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EE2021-11 |
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| Conference Information | |
| Committee | EE IEE-SPC |
| Conference Date | 2021-07-19 - 2021-07-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EE |
| Conference Code | 2021-07-EE-SPC |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Consideration of dominant switching timing separation on radiated noise using SiC MOSFET half bridge |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | MOSFET |
| Keyword(3) | Power device |
| Keyword(4) | Radiated noise |
| Keyword(5) | EMI |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toshiya Tadakuma |
| 1st Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 2nd Author's Name | Yuki Matsutaka |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 3rd Author's Name | Shin Suzuki |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 4th Author's Name | Motonobu Joko |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 5th Author's Name | Masahito Shoyama |
| 5th Author's Affiliation | Kyushu University (Kyushu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2021-07-20 09:55:00 |
| Presentation Time | 25 minutes |
| Registration for | EE |
| Paper # | EE2021-11 |
| Volume (vol) | vol.121 |
| Number (no) | no.124 |
| Page | pp.21-25 |
| #Pages | 5 |
| Date of Issue | 2021-07-12 (EE) |
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