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| Presentation | 2021-10-21 16:00 Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)  SDM2021-51 Link to ES Tech. Rep. Archives: SDM2021-51 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A current measurement platform to measure current across dielectrics with a high precision of $10^{-17}$ A applied for statistical measurement of discharge current due to traps in SiN dielectrics are presented. The developed platform consists of a common readout circuit part with 384×360 cells formed at 10 μm pitch and a dielectric part formed on the circuit part by a simple process. By applying a voltage to the top electrode of the dielectric part, a current across dielectrics of each cell can be statistically measured with high speed and high precision. We statistically measured the trap property of SiN films in MIM capacitors formed by plasma-enhanced CVD (PECVD) by Discharge Current Transient Spectroscopy (DCTS). The distributions of energy levels and densities of traps under different formation conditions with dielectric film thicknesses and electrode areas are verified. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Capacitor / SiN / Trap / DCTS / Current measurement / Platform / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 212, SDM2021-51, pp. 23-26, Oct. 2021. | |
| Paper # | SDM2021-51 | |
| Date of Issue | 2021-10-14 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2021-51 Link to ES Tech. Rep. Archives: SDM2021-51 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2021-10-21 - 2021-10-21 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2021-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics |
| Sub Title (in English) | |
| Keyword(1) | Capacitor |
| Keyword(2) | SiN |
| Keyword(3) | Trap |
| Keyword(4) | DCTS |
| Keyword(5) | Current measurement |
| Keyword(6) | Platform |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koga Saito |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Hayato Suzuki |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Hyeonwoo Park |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Rihito Kuroda |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Akinobu Teramoto |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 6th Author's Name | Tomoyuki Suwa |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 7th Author's Name | Shigetoshi Sugawa |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2021-10-21 16:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2021-51 |
| Volume (vol) | vol.121 |
| Number (no) | no.212 |
| Page | pp.23-26 |
| #Pages | 4 |
| Date of Issue | 2021-10-14 (SDM) |
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