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| Presentation | 2021-11-25 14:35 Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT)  ED2021-22 CPM2021-56 LQE2021-34 Link to ES Tech. Rep. Archives: ED2021-22 CPM2021-56 LQE2021-34 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons for this is that perfect-quality crystal has not been fabricated. Recently, high-purity GaN homoepitaxial layers have successfully been grown by hydride vapor phase epitaxy (HVPE). In this study, we have performed photoluminescence (PL) studies in the temperature range of 2 K ~ 300 K to clarify the optical properties and carrier dynamics of the pure GaN crystal material itself. As a result, PL spectra with very sharp peaks have been obtained at 2 K. It is observed that the intensity ratio of free exciton (FX) emission to donor-bound exciton (DBE) emission in the low-temperature region, simply correlates with the donor concentration. On the other hand, in the high temperature region, the intensity ratio of the longitudinal optical (LO) phonon replica to the zero-phonon line correlates with concentration of impurity other than donor atom. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / PL / exciton / LO phonon replica / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 261, LQE2021-34, pp. 37-40, Nov. 2021. | |
| Paper # | LQE2021-34 | |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2021-22 CPM2021-56 LQE2021-34 Link to ES Tech. Rep. Archives: ED2021-22 CPM2021-56 LQE2021-34 |
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| Conference Information | |
| Committee | ED CPM LQE |
| Conference Date | 2021-11-25 - 2021-11-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2021-11-ED-CPM-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | PL |
| Keyword(3) | exciton |
| Keyword(4) | LO phonon replica |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroto Imashiro |
| 1st Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 2nd Author's Name | Ryo Yamahida |
| 2nd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 3rd Author's Name | Hironao Kanamori |
| 3rd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 4th Author's Name | Ryuichi Watanabe |
| 4th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 5th Author's Name | Takeshi Kimura |
| 5th Author's Affiliation | SCIOCS COMPANY LIMITED (SCIOCS) |
| 6th Author's Name | Taichiro Konno |
| 6th Author's Affiliation | SCIOCS COMPANY LIMITED (SCIOCS) |
| 7th Author's Name | Hajime Fujikura |
| 7th Author's Affiliation | SCIOCS COMPANY LIMITED (SCIOCS) |
| 8th Author's Name | Atsushi A. Yamaguchi |
| 8th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
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| Speaker | Author-1 |
| Date Time | 2021-11-25 14:35:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2021-22, CPM2021-56, LQE2021-34 |
| Volume (vol) | vol.121 |
| Number (no) | no.259(ED), no.260(CPM), no.261(LQE) |
| Page | pp.37-40 |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
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