Paper Abstract and Keywords |
Presentation |
2021-12-01 10:10
MTJ-based non-volatile SRAM circuit with data-aware store control for energy saving Hisato Miyauchi, Kimiyoshi Usami (SIT) VLD2021-19 ICD2021-29 DC2021-25 RECONF2021-27 Link to ES Tech. Rep. Archives: ICD2021-29 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In recent years, the increase of leakage power in LSIs has become a problem, and one of the methods to reduce the leakage power is Non-Volatile Power Gating (NVPG) using Magnetic Tunnel Junction (MTJ) devices. In NVPG, volatile storage circuits such as SRAM are made non-volatile by MTJ, thereby solving the problem of data retention by PG. However, MTJ has a problem of high write energy. In this study, we proposed an SRAM with low energy consumption by equipping it with a function that skips writing to MTJ if the value is the same as the currently written value (DAS: Data Aware Store), and conducted simulation evaluation in a 65nm process. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SRAM / Power-Gating / MTJ / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 277, VLD2021-19, pp. 13-18, Dec. 2021. |
Paper # |
VLD2021-19 |
Date of Issue |
2021-11-24 (VLD, ICD, DC, RECONF) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
VLD2021-19 ICD2021-29 DC2021-25 RECONF2021-27 Link to ES Tech. Rep. Archives: ICD2021-29 |
Conference Information |
Committee |
VLD DC RECONF ICD IPSJ-SLDM |
Conference Date |
2021-12-01 - 2021-12-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Design Gaia 2021 -New Field of VLSI Design- |
Paper Information |
Registration To |
VLD |
Conference Code |
2021-12-VLD-DC-RECONF-ICD-SLDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
MTJ-based non-volatile SRAM circuit with data-aware store control for energy saving |
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SRAM |
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Power-Gating |
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MTJ |
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1st Author's Name |
Hisato Miyauchi |
1st Author's Affiliation |
Shibaura Institute of Technology (SIT) |
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Kimiyoshi Usami |
2nd Author's Affiliation |
Shibaura Institute of Technology (SIT) |
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Speaker |
Author-1 |
Date Time |
2021-12-01 10:10:00 |
Presentation Time |
25 minutes |
Registration for |
VLD |
Paper # |
VLD2021-19, ICD2021-29, DC2021-25, RECONF2021-27 |
Volume (vol) |
vol.121 |
Number (no) |
no.277(VLD), no.278(ICD), no.279(DC), no.280(RECONF) |
Page |
pp.13-18 |
#Pages |
6 |
Date of Issue |
2021-11-24 (VLD, ICD, DC, RECONF) |
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