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Paper Abstract and Keywords
Presentation 2022-06-21 17:20
Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2
Keisuke Kimura, Noriyuki Taoka, Shunsuke Nishimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya. Univ) SDM2022-31
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, a device with metal nanosheet (MNS) has been attracted much attention. However, control of surface morphology and crystalline phase of MNS on SiO2 is not enough for realizing the device. Formation of nickel silicide NS was challenged using a solid phase interdiffusion method, which contains deposition of different thicknesses of Ni and Si films on SiO2 and subsequent annealing. As a result, we found that reactions of oxidation and reduction have an important role when silicidation occurs in MNS. In a thick nickel silicide film, several types of crystalline phases exist after annealing. In this study, the nickel silicide NS with only Ni2Si phase and smooth surface is successfully formed.
Keyword (in Japanese) (See Japanese page) 
(in English) Thin film / Crystalline phase / Chemical bonding feature / Surface morphology / Metal-Silicide / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 84, SDM2022-31, pp. 27-30, June 2022.
Paper # SDM2022-31 
Date of Issue 2022-06-14 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2022-06-21 - 2022-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2022-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2 
Sub Title (in English)  
Keyword(1) Thin film  
Keyword(2) Crystalline phase  
Keyword(3) Chemical bonding feature  
Keyword(4) Surface morphology  
Keyword(5) Metal-Silicide  
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Keyword(7)  
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1st Author's Name Keisuke Kimura  
1st Author's Affiliation Nagoya University (Nagoya. Univ)
2nd Author's Name Noriyuki Taoka  
2nd Author's Affiliation Nagoya University (Nagoya. Univ)
3rd Author's Name Shunsuke Nishimura  
3rd Author's Affiliation Nagoya University (Nagoya. Univ)
4th Author's Name Akio Ohta  
4th Author's Affiliation Nagoya University (Nagoya. Univ)
5th Author's Name Katsunori Makihara  
5th Author's Affiliation Nagoya University (Nagoya. Univ)
6th Author's Name Seiichi Miyazaki  
6th Author's Affiliation Nagoya University (Nagoya. Univ)
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Speaker Author-1 
Date Time 2022-06-21 17:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2022-31 
Volume (vol) vol.122 
Number (no) no.84 
Page pp.27-30 
#Pages
Date of Issue 2022-06-14 (SDM) 


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