| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2022-11-10 11:00 [Invited Talk] Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)  SDM2022-65 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Extremely-thin-body (ETB) channels are regarded as the most promising channel structure for future CMOS technology nodes. In parallel, CMOS operation at low temperatures is demanded for the quantum computing and data center applications. Here, surface roughness (SR) scattering is a dominant scattering mechanism for such ETB channels and at low temperature. However, there is a challenge for the conventional linear model of SR scattering that the excessive roughness parameters are used in the linear model to explain the experiments. In this study, we have proposed a new model of surface roughness scattering including the nonlinearity of SR scattering, which can explain the experimental mobility of SOI, GOI and InAs-OI nMOSFETs by using roughness parameters obtained experimentally from TEM images. The material and surface orientation in ETB channels is optimized by calculating the mobility based on our nonlinear model. As a result, the anisotropic valley with heavy confinement mass is essentially important to suppress the SR scattering because of the low quantization energy fluctuation. In particular, (111) GOI is most expected thanks to the strong anisotropic L valley and have the excellent SR-limited and phonon-limited electron mobility even in the 2-nm-thick channels, which is an advantage over 2D materials. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Extremely-Thin-Body / Nanosheet / MOSFET / Surface Roughness Scattering / Mobility / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 247, SDM2022-65, pp. 7-12, Nov. 2022. | |
| Paper # | SDM2022-65 | |
| Date of Issue | 2022-11-03 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2022-65 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2022-11-10 - 2022-11-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2022-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering |
| Sub Title (in English) | |
| Keyword(1) | Extremely-Thin-Body |
| Keyword(2) | Nanosheet |
| Keyword(3) | MOSFET |
| Keyword(4) | Surface Roughness Scattering |
| Keyword(5) | Mobility |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kei Sumita |
| 1st Author's Affiliation | University of Tokyo (Univ. Tokyo) |
| 2nd Author's Name | Min-Soo Kang |
| 2nd Author's Affiliation | University of Tokyo (Univ. Tokyo) |
| 3rd Author's Name | Chia-Tsong Chen |
| 3rd Author's Affiliation | University of Tokyo (Univ. Tokyo) |
| 4th Author's Name | Kasidit Toprasertpong |
| 4th Author's Affiliation | University of Tokyo (Univ. Tokyo) |
| 5th Author's Name | Mitsuru Takenaka |
| 5th Author's Affiliation | University of Tokyo (Univ. Tokyo) |
| 6th Author's Name | Shinichi Takagi |
| 6th Author's Affiliation | University of Tokyo (Univ. Tokyo) |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2022-11-10 11:00:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2022-65 |
| Volume (vol) | vol.122 |
| Number (no) | no.247 |
| Page | pp.7-12 |
| #Pages | 6 |
| Date of Issue | 2022-11-03 (SDM) |
[Return to Top Page]