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| Presentation | 2022-11-11 14:00 [Invited Talk] Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide Munetaka Noguchi, Hiroshi Watanabe (Mitsubishi Electric Corp.), Koji Kita (Tokyo Univ.), Kazuyasu Nishikawa (Mitsubishi Electric Corp.)  SDM2022-75 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this study, the inversion layer mobility of the Si-face 4H-SiC MOSFET with nitrided gate oxide is examined under a wide range of acceptor concentration, and the limiting factors of the inversion layer mobility are modeled on the basis of these results. The effect of Coulomb scattering on the inversion layer mobility can be universally understood that it is increased when the inversion carriers get closer to the SiO2/SiC interface. Moreover, the method to experimentally extract the carrier scattering mechanisms which limit the inversion layer mobility is proposed, where the effect of Coulomb scattering on the inversion layer mobility is controlled by the acceptor concentration. Here, the framework of scattering mechanisms in inversion layer of SiC MOSFETs is assumed to be like that of Si MOSFETs. On the basis of this method, dominant scattering mechanisms which limit the inversion layer mobility of SiC MOSFETs are found to be phonon and Coulomb scatterings. This possibly suggests that the inversion layer mobility of SiC MOSFETs can be modeled without significantly changing the conventional framework of Si MOSFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / MOSFET / inversion layer mobility / Coulomb scattering / phonon scattering / Hall effect measurement / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 247, SDM2022-75, pp. 50-54, Nov. 2022. | |
| Paper # | SDM2022-75 | |
| Date of Issue | 2022-11-03 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2022-75 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2022-11-10 - 2022-11-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2022-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | MOSFET |
| Keyword(3) | inversion layer mobility |
| Keyword(4) | Coulomb scattering |
| Keyword(5) | phonon scattering |
| Keyword(6) | Hall effect measurement |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Munetaka Noguchi |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 2nd Author's Name | Hiroshi Watanabe |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 3rd Author's Name | Koji Kita |
| 3rd Author's Affiliation | The University of Tokyo (Tokyo Univ.) |
| 4th Author's Name | Kazuyasu Nishikawa |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
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| Speaker | Author-1 |
| Date Time | 2022-11-11 14:00:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2022-75 |
| Volume (vol) | vol.122 |
| Number (no) | no.247 |
| Page | pp.50-54 |
| #Pages | 5 |
| Date of Issue | 2022-11-03 (SDM) |
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