Paper Abstract and Keywords |
Presentation |
2022-11-11 15:15
[Invited Talk]
Reliable design of SiC Power Modules
-- An Experimental Characterization for Aging Prediction -- Shuhei Fukunaga (Osaka Univ.), Alberto Castellazzi (KUAS), Tsuyoshi Funaki (Osaka Univ.) SDM2022-76 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This research aims to develop the reliable design of multi-chip power modules with SiC MOSFETs for high-voltage power conversion systems. SiC power devices have a wider variance of their electrical characteristics than Si power devices, which will be acceptable to some extent in terms of manufacturing cost even after manufacturing technology matures. Since the parameter variance significantly affects the long-term reliability of power modules, it is required to develop the SiC-bespoke reliable design method. This paper evaluates the electrical parameter variance in several commercial SiC MOSFETs by a custom-developed semi-automatic characterization system. Based on the results obtained, the prospects for a highly reliable design of multi-chip SiC power modules are discussed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC MOSFET / power module / aging prediction / compact model / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 247, SDM2022-76, pp. 55-60, Nov. 2022. |
Paper # |
SDM2022-76 |
Date of Issue |
2022-11-03 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2022-76 |
Conference Information |
Committee |
SDM |
Conference Date |
2022-11-10 - 2022-11-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2022-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Reliable design of SiC Power Modules |
Sub Title (in English) |
An Experimental Characterization for Aging Prediction |
Keyword(1) |
SiC MOSFET |
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power module |
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aging prediction |
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compact model |
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1st Author's Name |
Shuhei Fukunaga |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Alberto Castellazzi |
2nd Author's Affiliation |
Kyoto University of Advanced Science (KUAS) |
3rd Author's Name |
Tsuyoshi Funaki |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2022-11-11 15:15:00 |
Presentation Time |
60 minutes |
Registration for |
SDM |
Paper # |
SDM2022-76 |
Volume (vol) |
vol.122 |
Number (no) |
no.247 |
Page |
pp.55-60 |
#Pages |
6 |
Date of Issue |
2022-11-03 (SDM) |
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