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| Presentation | 2022-11-16 10:20 DC-Feedback-Mode Zero-Threshold GaAs HEMT Rectifier/Voltage-Doubler Diode Rectifier for Applying Negative Gate-Bias to Microwave Power Amplifier Taki Nagata, Ryo Ishikawa, Kazuhiko Honjo (UEC)  MW2022-123 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In recent years, there has been much research on RF energy harvesting, which converts small electromagnetic waves in the environment into DC power. The rectifier that performs the RF-DC conversion is one of the key components in such a system. In this study, we propose a method to provide gate bias for microwave power amplifiers without using a DC power supply by applying the rectifier technology to convert low RF power to DC power and generating a negative voltage for the microwave power amplifier from a small portion of the RF power in the system. As the first attempt at this concept, a DC feedback mode zero-threshold GaAs HEMT rectifier and a voltage doubler diode rectifier were designed and fabricated for applying the gate bias of the GaAs HBT MMIC amplifier. The prototype rectifiers obtained an absolute output voltage of more than 1 V for an input voltage of less than 1 mW. Furthermore, the Power Added Efficiency (PAE) and power gain were measured by integrating these rectifiers into a GaAs HBT MMIC amplifier. The results were equivalent to those obtained by applying a gate bias with a DC power supply. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | rectifier / microwave power amplifier / negative gate biasing / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 250, MW2022-123, pp. 77-80, Nov. 2022. | |
| Paper # | MW2022-123 | |
| Date of Issue | 2022-11-08 (MW) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2022-123 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2022-11-15 - 2022-11-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukue-Bunka-Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave, etc. |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2022-11-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | DC-Feedback-Mode Zero-Threshold GaAs HEMT Rectifier/Voltage-Doubler Diode Rectifier for Applying Negative Gate-Bias to Microwave Power Amplifier |
| Sub Title (in English) | |
| Keyword(1) | rectifier |
| Keyword(2) | microwave power amplifier |
| Keyword(3) | negative gate biasing |
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| 1st Author's Name | Taki Nagata |
| 1st Author's Affiliation | The University of Electro-Communications (UEC) |
| 2nd Author's Name | Ryo Ishikawa |
| 2nd Author's Affiliation | The University of Electro-Communications (UEC) |
| 3rd Author's Name | Kazuhiko Honjo |
| 3rd Author's Affiliation | The University of Electro-Communications (UEC) |
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| Speaker | Author-1 |
| Date Time | 2022-11-16 10:20:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | MW2022-123 |
| Volume (vol) | vol.122 |
| Number (no) | no.250 |
| Page | pp.77-80 |
| #Pages | 4 |
| Date of Issue | 2022-11-08 (MW) |
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