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Paper Abstract and Keywords
Presentation 2022-11-16 10:20
DC-Feedback-Mode Zero-Threshold GaAs HEMT Rectifier/Voltage-Doubler Diode Rectifier for Applying Negative Gate-Bias to Microwave Power Amplifier
Taki Nagata, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2022-123 Link to ES Tech. Rep. Archives: MW2022-123
Abstract (in Japanese) (See Japanese page) 
(in English) In recent years, there has been much research on RF energy harvesting, which converts small electromagnetic waves in the environment into DC power. The rectifier that performs the RF-DC conversion is one of the key components in such a system. In this study, we propose a method to provide gate bias for microwave power amplifiers without using a DC power supply by applying the rectifier technology to convert low RF power to DC power and generating a negative voltage for the microwave power amplifier from a small portion of the RF power in the system. As the first attempt at this concept, a DC feedback mode zero-threshold GaAs HEMT rectifier and a voltage doubler diode rectifier were designed and fabricated for applying the gate bias of the GaAs HBT MMIC amplifier. The prototype rectifiers obtained an absolute output voltage of more than 1 V for an input voltage of less than 1 mW. Furthermore, the Power Added Efficiency (PAE) and power gain were measured by integrating these rectifiers into a GaAs HBT MMIC amplifier. The results were equivalent to those obtained by applying a gate bias with a DC power supply.
Keyword (in Japanese) (See Japanese page) 
(in English) rectifier / microwave power amplifier / negative gate biasing / / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 250, MW2022-123, pp. 77-80, Nov. 2022.
Paper # MW2022-123 
Date of Issue 2022-11-08 (MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2022-123 Link to ES Tech. Rep. Archives: MW2022-123

Conference Information
Committee MW  
Conference Date 2022-11-15 - 2022-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukue-Bunka-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave, etc. 
Paper Information
Registration To MW 
Conference Code 2022-11-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) DC-Feedback-Mode Zero-Threshold GaAs HEMT Rectifier/Voltage-Doubler Diode Rectifier for Applying Negative Gate-Bias to Microwave Power Amplifier 
Sub Title (in English)  
Keyword(1) rectifier  
Keyword(2) microwave power amplifier  
Keyword(3) negative gate biasing  
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1st Author's Name Taki Nagata  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Ryo Ishikawa  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Kazuhiko Honjo  
3rd Author's Affiliation The University of Electro-Communications (UEC)
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Speaker Author-1 
Date Time 2022-11-16 10:20:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2022-123 
Volume (vol) vol.122 
Number (no) no.250 
Page pp.77-80 
#Pages 4 
Date of Issue 2022-11-08 (MW) 

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