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Paper Abstract and Keywords
Presentation 2022-11-24 15:15
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs
Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69
Abstract (in Japanese) (See Japanese page) 
(in English) GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realization of GaN-HBTs, there are several issues such as high offset voltages caused by the high resistance of p-type base layers. In this study, we investigated a p-GaInN base layer, which is expected to have lower resistivity than the p-GaN base layer, and a quaternary AlGaInN emitter layer which allows for the design of energy band gaps with less strains realizing low offset voltages in GaN HBTs. The electrical properties and surface morphologies of p-GaInN grown at 800°C to 840°C by MOCVD were investigated, and p-GaInN with an InN mole fraction of 4% or less was considered promising as a base layer. Nearly lattice-matched quaternary AlGaInN emitter layers were designed and grown by varying InN mole fractions at a constant AlN/GaN mole ratio, so as to satisfy an energy band offset and a surface flatness at the same time.
Keyword (in Japanese) (See Japanese page) 
(in English) HBT / p-GaInN / AlGaInN / MOCVD / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 271, ED2022-36, pp. 57-60, Nov. 2022.
Paper # ED2022-36 
Date of Issue 2022-11-17 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
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Download PDF ED2022-36 CPM2022-61 LQE2022-69

Conference Information
Committee CPM ED LQE  
Conference Date 2022-11-24 - 2022-11-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Winc Aichi (Aichi Industry & Labor Center) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2022-11-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs 
Sub Title (in English)  
Keyword(1) HBT  
Keyword(2) p-GaInN  
Keyword(3) AlGaInN  
Keyword(4) MOCVD  
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1st Author's Name Yusuke Iida  
1st Author's Affiliation Nagoya Institute of Technology (NITech)
2nd Author's Name Akira Mase  
2nd Author's Affiliation Nagoya Institute of Technology (NITech)
3rd Author's Name Masaya Takimoto  
3rd Author's Affiliation Nagoya Institute of Technology (NITech)
4th Author's Name Yutaka Nikai  
4th Author's Affiliation Nagoya Institute of Technology (NITech)
5th Author's Name Takashi Egawa  
5th Author's Affiliation Nagoya Institute of Technology (NITech)
6th Author's Name Makoto Miyoshi  
6th Author's Affiliation Nagoya Institute of Technology (NITech)
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Speaker Author-1 
Date Time 2022-11-24 15:15:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2022-36, CPM2022-61, LQE2022-69 
Volume (vol) vol.122 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.57-60 
#Pages
Date of Issue 2022-11-17 (ED, CPM, LQE) 


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