Paper Abstract and Keywords |
Presentation |
2022-11-24 15:15
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech) ED2022-36 CPM2022-61 LQE2022-69 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN-based HBTs are very promising as next-generation high-frequency power devices. However, when considering the realization of GaN-HBTs, there are several issues such as high offset voltages caused by the high resistance of p-type base layers. In this study, we investigated a p-GaInN base layer, which is expected to have lower resistivity than the p-GaN base layer, and a quaternary AlGaInN emitter layer which allows for the design of energy band gaps with less strains realizing low offset voltages in GaN HBTs. The electrical properties and surface morphologies of p-GaInN grown at 800°C to 840°C by MOCVD were investigated, and p-GaInN with an InN mole fraction of 4% or less was considered promising as a base layer. Nearly lattice-matched quaternary AlGaInN emitter layers were designed and grown by varying InN mole fractions at a constant AlN/GaN mole ratio, so as to satisfy an energy band offset and a surface flatness at the same time. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
HBT / p-GaInN / AlGaInN / MOCVD / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 271, ED2022-36, pp. 57-60, Nov. 2022. |
Paper # |
ED2022-36 |
Date of Issue |
2022-11-17 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2022-36 CPM2022-61 LQE2022-69 |
Conference Information |
Committee |
CPM ED LQE |
Conference Date |
2022-11-24 - 2022-11-25 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Winc Aichi (Aichi Industry & Labor Center) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2022-11-CPM-ED-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs |
Sub Title (in English) |
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Keyword(1) |
HBT |
Keyword(2) |
p-GaInN |
Keyword(3) |
AlGaInN |
Keyword(4) |
MOCVD |
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1st Author's Name |
Yusuke Iida |
1st Author's Affiliation |
Nagoya Institute of Technology (NITech) |
2nd Author's Name |
Akira Mase |
2nd Author's Affiliation |
Nagoya Institute of Technology (NITech) |
3rd Author's Name |
Masaya Takimoto |
3rd Author's Affiliation |
Nagoya Institute of Technology (NITech) |
4th Author's Name |
Yutaka Nikai |
4th Author's Affiliation |
Nagoya Institute of Technology (NITech) |
5th Author's Name |
Takashi Egawa |
5th Author's Affiliation |
Nagoya Institute of Technology (NITech) |
6th Author's Name |
Makoto Miyoshi |
6th Author's Affiliation |
Nagoya Institute of Technology (NITech) |
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Speaker |
Author-1 |
Date Time |
2022-11-24 15:15:00 |
Presentation Time |
20 minutes |
Registration for |
ED |
Paper # |
ED2022-36, CPM2022-61, LQE2022-69 |
Volume (vol) |
vol.122 |
Number (no) |
no.271(ED), no.272(CPM), no.273(LQE) |
Page |
pp.57-60 |
#Pages |
4 |
Date of Issue |
2022-11-17 (ED, CPM, LQE) |
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