Paper Abstract and Keywords |
Presentation |
2022-11-25 10:35
[Encouragement Talk]
Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2022-40 CPM2022-65 LQE2022-73 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We believe that an accurate estimation of the internal quantum efficiency (IQE) will lead to a comprehensive understanding of the carrier dynamics, and have proposed a simultaneous photoacoustic (PA) and photoluminescence (PL) measurements method to estimate the absolute value of IQE from experiments by measuring both light and heat generated carrier recombination. In this study, we have combined the simultaneous PA/PL measurements method with the time-resolved PL measurement to evaluate the dependence of radiative and non-radiative recombination lifetimes on the excitation carrier density in various InGaN-QW samples. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN quantum well / carrier dynamics / internal quantum efficiency / recombination lifetime / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 273, LQE2022-73, pp. 73-76, Nov. 2022. |
Paper # |
LQE2022-73 |
Date of Issue |
2022-11-17 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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