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Paper Abstract and Keywords
Presentation 2022-11-25 10:35
[Encouragement Talk] Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations
Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2022-40 CPM2022-65 LQE2022-73
Abstract (in Japanese) (See Japanese page) 
(in English) The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We believe that an accurate estimation of the internal quantum efficiency (IQE) will lead to a comprehensive understanding of the carrier dynamics, and have proposed a simultaneous photoacoustic (PA) and photoluminescence (PL) measurements method to estimate the absolute value of IQE from experiments by measuring both light and heat generated carrier recombination. In this study, we have combined the simultaneous PA/PL measurements method with the time-resolved PL measurement to evaluate the dependence of radiative and non-radiative recombination lifetimes on the excitation carrier density in various InGaN-QW samples.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN quantum well / carrier dynamics / internal quantum efficiency / recombination lifetime / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 273, LQE2022-73, pp. 73-76, Nov. 2022.
Paper # LQE2022-73 
Date of Issue 2022-11-17 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
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Conference Information
Committee CPM ED LQE  
Conference Date 2022-11-24 - 2022-11-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Winc Aichi (Aichi Industry & Labor Center) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2022-11-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations 
Sub Title (in English)  
Keyword(1) InGaN quantum well  
Keyword(2) carrier dynamics  
Keyword(3) internal quantum efficiency  
Keyword(4) recombination lifetime  
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1st Author's Name Keito Mori-Tamamura  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
2nd Author's Name Yuya Morimoto  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
3rd Author's Name Atsushi A. Yamaguchi  
3rd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
4th Author's Name Susumu Kusanagi  
4th Author's Affiliation Sony Group Corporation (Sony)
5th Author's Name Yuya Kanitani  
5th Author's Affiliation Sony Group Corporation (Sony)
6th Author's Name Yoshihiro Kudo  
6th Author's Affiliation Sony Group Corporation (Sony)
7th Author's Name Shigetaka Tomiya  
7th Author's Affiliation Sony Group Corporation (Sony)
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Speaker Author-1 
Date Time 2022-11-25 10:35:00 
Presentation Time 30 minutes 
Registration for LQE 
Paper # ED2022-40, CPM2022-65, LQE2022-73 
Volume (vol) vol.122 
Number (no) no.271(ED), no.272(CPM), no.273(LQE) 
Page pp.73-76 
#Pages
Date of Issue 2022-11-17 (ED, CPM, LQE) 


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