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Paper Abstract and Keywords
Presentation 2022-12-19 16:45
Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications
Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48
Abstract (in Japanese) (See Japanese page) 
(in English) Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, sensing, and imaging applications. InP-HEMT is one of the most promising component for terahertz ICs since it shows excellent RF characteristics, which is due to high electron mobility of the channel and impurity-scattering-free HEMT structure. Increasing Indium composition of InxGa1-xAs channel is a basic strategy for improving the carrier mobility, whereas it also leads to severe impact ionization, which degrades the RF performances. Since material property determines the upper limit of device performance, InP-HEMTs with InAs (x = 1) channel are indispensable for next generation terahertz ICs. In this study, therefore, the performance of InP-HEMTs with InAs composite channel was evaluated in comparison with our conventional In-rich In0.2Ga0.8As composite channel. Its advantages and disadvantages were discussed from the view point of terahertz applications.
Keyword (in Japanese) (See Japanese page) 
(in English) InP-HEMT / InGaAs / InAs / Composite channel / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 319, ED2022-77, pp. 28-33, Dec. 2022.
Paper # ED2022-77 
Date of Issue 2022-12-12 (ED, MWPTHz) 
ISSN Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED MWPTHz  
Conference Date 2022-12-19 - 2022-12-20 
Place (in Japanese) (See Japanese page) 
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Paper Information
Registration To ED 
Conference Code 2022-12-ED-MWPTHz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications 
Sub Title (in English)  
Keyword(1) InP-HEMT  
Keyword(2) InGaAs  
Keyword(3) InAs  
Keyword(4) Composite channel  
1st Author's Name Taro Sasaki  
1st Author's Affiliation Nippon Telegraph and Telephone (NTT)
2nd Author's Name Takuya Tsutsumi  
2nd Author's Affiliation Nippon Telegraph and Telephone (NTT)
3rd Author's Name Hiroki Sugiyama  
3rd Author's Affiliation Nippon Telegraph and Telephone (NTT)
4th Author's Name Fumito Nakajima  
4th Author's Affiliation Nippon Telegraph and Telephone (NTT)
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Date Time 2022-12-19 16:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2022-77, MWPTHz2022-48 
Volume (vol) vol.122 
Number (no) no.319(ED), no.320(MWPTHz) 
Page pp.28-33 
Date of Issue 2022-12-12 (ED, MWPTHz) 

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