Paper Abstract and Keywords |
Presentation |
2022-12-19 16:45
Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications Taro Sasaki, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2022-77 MWPTHz2022-48 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Terahertz ICs have been attracting much attention due to its potential use of next generation wireless communications, sensing, and imaging applications. InP-HEMT is one of the most promising component for terahertz ICs since it shows excellent RF characteristics, which is due to high electron mobility of the channel and impurity-scattering-free HEMT structure. Increasing Indium composition of InxGa1-xAs channel is a basic strategy for improving the carrier mobility, whereas it also leads to severe impact ionization, which degrades the RF performances. Since material property determines the upper limit of device performance, InP-HEMTs with InAs (x = 1) channel are indispensable for next generation terahertz ICs. In this study, therefore, the performance of InP-HEMTs with InAs composite channel was evaluated in comparison with our conventional In-rich In0.2Ga0.8As composite channel. Its advantages and disadvantages were discussed from the view point of terahertz applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InP-HEMT / InGaAs / InAs / Composite channel / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 319, ED2022-77, pp. 28-33, Dec. 2022. |
Paper # |
ED2022-77 |
Date of Issue |
2022-12-12 (ED, MWPTHz) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2022-77 MWPTHz2022-48 |
Conference Information |
Committee |
ED MWPTHz |
Conference Date |
2022-12-19 - 2022-12-20 |
Place (in Japanese) |
(See Japanese page) |
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Topics (in Japanese) |
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Paper Information |
Registration To |
ED |
Conference Code |
2022-12-ED-MWPTHz |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of InP-HEMTs with In0.8Ga0.2As/InAs composite channel for terahertz applications |
Sub Title (in English) |
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Keyword(1) |
InP-HEMT |
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InGaAs |
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InAs |
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Composite channel |
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1st Author's Name |
Taro Sasaki |
1st Author's Affiliation |
Nippon Telegraph and Telephone (NTT) |
2nd Author's Name |
Takuya Tsutsumi |
2nd Author's Affiliation |
Nippon Telegraph and Telephone (NTT) |
3rd Author's Name |
Hiroki Sugiyama |
3rd Author's Affiliation |
Nippon Telegraph and Telephone (NTT) |
4th Author's Name |
Fumito Nakajima |
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Nippon Telegraph and Telephone (NTT) |
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Speaker |
Author-1 |
Date Time |
2022-12-19 16:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2022-77, MWPTHz2022-48 |
Volume (vol) |
vol.122 |
Number (no) |
no.319(ED), no.320(MWPTHz) |
Page |
pp.28-33 |
#Pages |
6 |
Date of Issue |
2022-12-12 (ED, MWPTHz) |
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