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Presentation 2022-12-19 15:25
Admittance spectroscopy of triple-barrier resonant tunnel diodes for extraction of quantum transport parameters.
Takeshi Makino, Michihiko Suhara (TMU), Kiyoto Asakawa (TMCIT), Issei Watanabe, Koichi Akahane (NICT) ED2022-75 MWPTHz2022-46
Abstract (in Japanese) (See Japanese page) 
(in English) Triple-barrier resonant tunneling diodes (TBRTDs) consisting of InGaAs/InAs/InAlAs heterostructures fabricated by low-temperature MBE growth on semi-insulating InP substrates were fabricated and their S-parameters up to 67 GHz were measured at room temperature. In particular, the negative differential conductance (NDC) due to the triple barrier structure could be measured without unwanted self oscillations. Admittance data of TBRTDs were deembedded by getting rid of parasitic components with help of electromagnetic simulations for CAD model of particular fabricated device structures.
Results of admittance spectroscopy show that it is essential to take into account non-equilibrium electron relaxation and tunneling transport phenomena due to the interaction between the reservoir system and the resonant tunneling system in order to describe the frequency characteristics of TBRTDs. Quantum transport parameters were defined as a quantitative expression of these phenomena and their bias dependence was extracted. In the TBRTDs fabricated in this study, the quantum transport parameters were found to be on the order of approximately picoseconds. By extrapolation of the obtained theoretical admittances, the frequency characteristics of NDCs in the 300 GHz band were predicted.
Keyword (in Japanese) (See Japanese page) 
(in English) triple-barrier resonant tunneling diode / quamtum transport parameters / admittance spectroscopy / / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 319, ED2022-75, pp. 19-22, Dec. 2022.
Paper # ED2022-75 
Date of Issue 2022-12-12 (ED, MWPTHz) 
ISSN Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED MWPTHz  
Conference Date 2022-12-19 - 2022-12-20 
Place (in Japanese) (See Japanese page) 
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Paper Information
Registration To ED 
Conference Code 2022-12-ED-MWPTHz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Admittance spectroscopy of triple-barrier resonant tunnel diodes for extraction of quantum transport parameters. 
Sub Title (in English)  
Keyword(1) triple-barrier resonant tunneling diode  
Keyword(2) quamtum transport parameters  
Keyword(3) admittance spectroscopy  
1st Author's Name Takeshi Makino  
1st Author's Affiliation Tokyo Metropolitan University (TMU)
2nd Author's Name Michihiko Suhara  
2nd Author's Affiliation Tokyo Metropolitan University (TMU)
3rd Author's Name Kiyoto Asakawa  
3rd Author's Affiliation Tokyo Metropolitan College of Industrial Technology (TMCIT)
4th Author's Name Issei Watanabe  
4th Author's Affiliation National Institute of Information and Communications Technology (NICT)
5th Author's Name Koichi Akahane  
5th Author's Affiliation National Institute of Information and Communications Technology (NICT)
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Speaker Author-1 
Date Time 2022-12-19 15:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2022-75, MWPTHz2022-46 
Volume (vol) vol.122 
Number (no) no.319(ED), no.320(MWPTHz) 
Page pp.19-22 
Date of Issue 2022-12-12 (ED, MWPTHz) 

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