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| Presentation | 2022-12-20 11:15 Evaluation of bandgap and carrier transport property in GaN:Eu using laser terahertz emission microscopy Fumiazku Murakami (ILE, Osaka Univ.), Atsushi Takeo (GSE, Osaka Univ.), Abdul Mannan (The University of Manchester), Yasufumi Fujiwara (GSE, Osaka Univ.), Masayoshi Tonouchi (ILE, Osaka Univ.)  ED2022-82 MWPTHz2022-53 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaN:Eu, gallium nitride (GaN) doped with europium, has attracted much attention as a material for GaN-based red light-emitting diode (LED). Although improvement of LED performance using GaN:Eu/GaN superlattice structure has been reported, the mechanism of the enhancement has not been clarified. In this study, we found that the bandgap of GaN:Eu is smaller than that of undoped GaN using terahertz emission spectroscopy. Furthermore, we revealed that the carrier mobility in the superlattice is smaller than that in the GaN:Eu monolayer, suggesting a new model that the carrier confinement effect due to the bandgap difference between GaN:Eu and GaN in the superlattice is responsible for the improvement of LED performance. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | THz emission spectroscopy / laser THz emission microscopy / ultrafast carrier dynamics / GaN:Eu / red-LED / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 320, MWPTHz2022-53, pp. 52-57, Dec. 2022. | |
| Paper # | MWPTHz2022-53 | |
| Date of Issue | 2022-12-12 (ED, MWPTHz) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2022-82 MWPTHz2022-53 |
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| Conference Information | |
| Committee | ED MWPTHz |
| Conference Date | 2022-12-19 - 2022-12-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MWPTHz |
| Conference Code | 2022-12-ED-MWPTHz |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of bandgap and carrier transport property in GaN:Eu using laser terahertz emission microscopy |
| Sub Title (in English) | |
| Keyword(1) | THz emission spectroscopy |
| Keyword(2) | laser THz emission microscopy |
| Keyword(3) | ultrafast carrier dynamics |
| Keyword(4) | GaN:Eu |
| Keyword(5) | red-LED |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Fumiazku Murakami |
| 1st Author's Affiliation | Institute of Laser Engineering, Osaka University (ILE, Osaka Univ.) |
| 2nd Author's Name | Atsushi Takeo |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka University (GSE, Osaka Univ.) |
| 3rd Author's Name | Abdul Mannan |
| 3rd Author's Affiliation | The University of Manchester (The University of Manchester) |
| 4th Author's Name | Yasufumi Fujiwara |
| 4th Author's Affiliation | Graduate School of Engineering, Osaka University (GSE, Osaka Univ.) |
| 5th Author's Name | Masayoshi Tonouchi |
| 5th Author's Affiliation | Institute of Laser Engineering, Osaka University (ILE, Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2022-12-20 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | MWPTHz |
| Paper # | ED2022-82, MWPTHz2022-53 |
| Volume (vol) | vol.122 |
| Number (no) | no.319(ED), no.320(MWPTHz) |
| Page | pp.52-57 |
| #Pages | 6 |
| Date of Issue | 2022-12-12 (ED, MWPTHz) |
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