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| Presentation | 2023-01-20 11:25 Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system Yandagkhuu Bayarsaikhan, Ichiro Omura (KIT)  EE2022-46 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | As the demand for high reliability in power electronics systems increases, the online condition monitoring of power devices is becoming crucial. The junction temperature is a vital indicator of the reliability and health of the power semiconductor devices. Therefore, we developed a novel junction temperature measurement method via dynamic threshold voltage. The proposed method uses a specially designed PCB sensor for detecting a drain current and captures the dynamic gate-source voltage at predetermined drain current levels. The analog circuit was designed and experimentally verified by a double pulse test. A 16-bit ADC embedded in the microcontroller is utilized to digitize the captured voltage to demonstrate the monitoring system. The temperature sensitivity of the Power MOSFET was -2.2 mV/°C and was unaffected by the high side device temperature. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOSFET / Temperature measurement / Temperature monitoring / TSEP / Threshold voltage / Rogowski coil / PCB current sensor / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 343, EE2022-46, pp. 111-116, Jan. 2023. | |
| Paper # | EE2022-46 | |
| Date of Issue | 2023-01-12 (EE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EE2022-46 |
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| Conference Information | |
| Committee | EE |
| Conference Date | 2023-01-19 - 2023-01-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyushu Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EE |
| Conference Code | 2023-01-EE |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | Temperature measurement |
| Keyword(3) | Temperature monitoring |
| Keyword(4) | TSEP |
| Keyword(5) | Threshold voltage |
| Keyword(6) | Rogowski coil |
| Keyword(7) | PCB current sensor |
| Keyword(8) | |
| 1st Author's Name | Yandagkhuu Bayarsaikhan |
| 1st Author's Affiliation | Kyushu Institute of Technology (KIT) |
| 2nd Author's Name | Ichiro Omura |
| 2nd Author's Affiliation | Kyushu Institute of Technology (KIT) |
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| Speaker | Author-1 |
| Date Time | 2023-01-20 11:25:00 |
| Presentation Time | 25 minutes |
| Registration for | EE |
| Paper # | EE2022-46 |
| Volume (vol) | vol.122 |
| Number (no) | no.343 |
| Page | pp.111-116 |
| #Pages | 6 |
| Date of Issue | 2023-01-12 (EE) |
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