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Paper Abstract and Keywords
Presentation 2023-01-20 16:05
Behavior of power MOSFETs driving 13.56MHz series LC resonant inverters
Daisuke Arai, Aoi Oyane, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2022-54
Abstract (in Japanese) (See Japanese page) 
(in English) The behavior of SiC-MOSFETs was analyzed using semiconductor device simulation (TCAD) in a series LC resonant inverter operating at 13.56 MHz in which SiC-MOSFETs are used in a half-bridge configuration as the main switch. In this resonant inverter, turn-on for MOSFETs is ZVS while turn-off is not soft switching. There are few prior study which accurately estimated the contribution and increase/decrease of the electron current through the MOS channel and the contribution and increase/decrease of the hole current due to depletion layer expansion/contraction in the drift layer, especially during turn-on and turn-off transients. In the Spice model, parallel model of the ideal-switch and capacitances of Cds, Cgd, and Cgs is often used. The ideal-switch approximation means that when the gate bias crosses the threshold voltage, the MOS channel appears or disappears instantaneously, i.e., the electron current conducts or shuts down instantaneously. According to the approximation while the MOS is in blocking state, all current flows as charging and discharging currents in Cds, Cgd, and Cgs. However, actually, MOS channel appears and disappears gradually during turn-on or turn-off transient, and the electron current flowing through the channels also increases and decreases during the transient. The electron current does not disappear instantaneously and switch to a capacitive charging/discharging current at once. In this study, we analyzed the physical operation of MOSFETs driving a resonant inverter and validated the ideal-switch approximation in comparison with actual MOSFET operation.
Keyword (in Japanese) (See Japanese page) 
(in English) 13.56MHz / Series LC resonant inverter / TCAD / ZVS / Transient analysis / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 343, EE2022-54, pp. 157-162, Jan. 2023.
Paper # EE2022-54 
Date of Issue 2023-01-12 (EE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee EE  
Conference Date 2023-01-19 - 2023-01-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyushu Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2023-01-EE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Behavior of power MOSFETs driving 13.56MHz series LC resonant inverters 
Sub Title (in English)  
Keyword(1) 13.56MHz  
Keyword(2) Series LC resonant inverter  
Keyword(3) TCAD  
Keyword(4) ZVS  
Keyword(5) Transient analysis  
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1st Author's Name Daisuke Arai  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Aoi Oyane  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Yu Yonezawa  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Jun Imaoka  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Masayoshi Yamamoto  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2023-01-20 16:05:00 
Presentation Time 25 minutes 
Registration for EE 
Paper # EE2022-54 
Volume (vol) vol.122 
Number (no) no.343 
Page pp.157-162 
#Pages
Date of Issue 2023-01-12 (EE) 


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