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| Presentation | 2023-01-30 13:40 [Invited Talk] A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL)  SDM2022-80 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors. A damascene-processed bottom electrode eliminated leakage and endurance issues at the capacitor edge. The fabricated memory,with 1T1C configuration including the 0.06-μm2 capacitor, achieves nonvolatility, reliability comparable to prior arts, high-speed operation, and lower voltage. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | IGZO / Oxide Semiconductor / HZO / damascene / BEOL / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 375, SDM2022-80, pp. 5-8, Jan. 2023. | |
| Paper # | SDM2022-80 | |
| Date of Issue | 2023-01-23 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2022-80 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2023-01-30 - 2023-01-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. B3-1 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2023-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time |
| Sub Title (in English) | |
| Keyword(1) | IGZO |
| Keyword(2) | Oxide Semiconductor |
| Keyword(3) | HZO |
| Keyword(4) | damascene |
| Keyword(5) | BEOL |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazuaki Ohshima |
| 1st Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 2nd Author's Name | Masami Endo |
| 2nd Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 3rd Author's Name | Shiyuu Numata |
| 3rd Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 4th Author's Name | Yuji Egi |
| 4th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 5th Author's Name | Fumito Isaka |
| 5th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 6th Author's Name | Toshikazu Ohno |
| 6th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 7th Author's Name | Sachiaki Tezuka |
| 7th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 8th Author's Name | Toshiki Hamada |
| 8th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 9th Author's Name | Kazuma Furutani |
| 9th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 10th Author's Name | Kazuki Tsuda |
| 10th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 11th Author's Name | Takanori Matsuzaki |
| 11th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 12th Author's Name | Tatsuya Onuki |
| 12th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 13th Author's Name | Tsutomu Murakawa |
| 13th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 14th Author's Name | Hitoshi Kunitake |
| 14th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 15th Author's Name | Masaharu Kobayashi |
| 15th Author's Affiliation | The University of Tokyo (The Univ. of Tokyo) |
| 16th Author's Name | Shunpei Yamazaki |
| 16th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd. (SEL) |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2023-01-30 13:40:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2022-80 |
| Volume (vol) | vol.122 |
| Number (no) | no.375 |
| Page | pp.5-8 |
| #Pages | 4 |
| Date of Issue | 2023-01-23 (SDM) |
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