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| Presentation | 2023-03-02 14:30 Quasi millimeter wave high-power rectifier with GaAs E-pHEMT GADs Naoya Kakutani, Yuya Hirose, Naoki Sakai, Kenji Itoh (KIT)  MW2022-165 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this report, quasi-millimeter wave 1 W-class double-voltage rectifier MMIC with 0.18 μm GaAs E-PHEMT gated anode diodes (GADs) is presented. At first, high current characteristic of the 0.18 μm GaAs E-PHEMT GAD is indicated in its characterization, compared with the GaAs SBD. As the result, terminal capacitance of the GAD is made lower than that of the GaAs SBD, matching loss can be reduced especially in high-power rectification. In the experimental investigation of the developed double voltage rectifier MMIC, rectification efficiency of 62 % and output voltage of 32.9 V are obtained at an input power of 30 dBm. This is the highest input power in reported rectifiers from 20 to 40 GHz band. And measured rectification efficiency is extreme higher than the reported efficiency trend versus input power. The reported circuit technique with the GaAs E-PHEMT GAD indicates good possibility for future millimeter-wave high-power transmission. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaAs E-pHEMT / Gated anode diode / MMIC / Rectifier / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 122, no. 411, MW2022-165, pp. 48-53, March 2023. | |
| Paper # | MW2022-165 | |
| Date of Issue | 2023-02-23 (MW) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2022-165 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2023-03-02 - 2023-03-03 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tottori Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave, etc. |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2023-03-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quasi millimeter wave high-power rectifier with GaAs E-pHEMT GADs |
| Sub Title (in English) | |
| Keyword(1) | GaAs E-pHEMT |
| Keyword(2) | Gated anode diode |
| Keyword(3) | MMIC |
| Keyword(4) | Rectifier |
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| Keyword(8) | |
| 1st Author's Name | Naoya Kakutani |
| 1st Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 2nd Author's Name | Yuya Hirose |
| 2nd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 3rd Author's Name | Naoki Sakai |
| 3rd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 4th Author's Name | Kenji Itoh |
| 4th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
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| Speaker | Author-2 |
| Date Time | 2023-03-02 14:30:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | MW2022-165 |
| Volume (vol) | vol.122 |
| Number (no) | no.411 |
| Page | pp.48-53 |
| #Pages | 6 |
| Date of Issue | 2023-02-23 (MW) |
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