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Presentation 2023-04-11 13:20
[Invited Talk] Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating
Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa (SEL), Toru Nakura (Fukuoka Univ.), Shunpei Yamazaki (SEL) ICD2023-10
Abstract (in Japanese) (See Japanese page) 
(in English) We have achieved a small-area, low-power AI chip that enables inference corresponding to multiple neural networks using a three-dimensional stacked oxide semiconductor memory. This chip has two bank memories which are directly stacked on a flip-flop and an AI accelerator utilizing the feature that an oxide semiconductor FET can be embedded in Si CMOS BEOL. An average power of 25.2 μW was achieved by intermittent operation with two types of inference and power gating.
Keyword (in Japanese) (See Japanese page) 
(in English) Oxide semiconductor / Machine learning / Memory / / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 1, ICD2023-10, pp. 18-23, April 2023.
Paper # ICD2023-10 
Date of Issue 2023-04-03 (ICD) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2023-04-10 - 2023-04-11 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To ICD 
Conference Code 2023-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating 
Sub Title (in English)  
Keyword(1) Oxide semiconductor  
Keyword(2) Machine learning  
Keyword(3) Memory  
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1st Author's Name Yuto Yakubo  
1st Author's Affiliation Semiconductor Energy Laboratory (SEL)
2nd Author's Name Kazuma Furutani  
2nd Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
3rd Author's Name Kouhei Toyotaka  
3rd Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
4th Author's Name Haruki Katagiri  
4th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
5th Author's Name Masashi Fujita  
5th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
6th Author's Name Munehiro Kozuma  
6th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
7th Author's Name Yoshinori Ando  
7th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
8th Author's Name Yoshiyuki Kurokawa  
8th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
9th Author's Name Toru Nakura  
9th Author's Affiliation Fukuoka University (Fukuoka Univ.)
10th Author's Name Shunpei Yamazaki  
10th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd. (SEL)
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Speaker Author-1 
Date Time 2023-04-11 13:20:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2023-10 
Volume (vol) vol.123 
Number (no) no.1 
Page pp.18-23 
#Pages
Date of Issue 2023-04-03 (ICD) 


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