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| Presentation | 2023-04-15 10:45 PUF Based on Fetal-Movement Circuit Kotaro Naruse, Takayuki Ueda, Jun Shiomi, Yoshihiro Midoh, Noriyuki Miura (Osaka Univ.)  HWS2023-12 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | As a yet unexploited high-energy source for powering ICs, this paper focused on high-energy plasma in a semiconductor fabrication process. Plasma-based Reactive Ion Etching (RIE) is one mainstream etching method in semiconductor fabrication. The high-energy plasma is used to process silicon and metal layers, but the Ion charging current is strong enough to break a transistor gate oxide. By harvesting stable power from this high-energy etching plasma, a computing circuit operating during its fabrication process can be realized, namely Fetal-Movement Circuit (FMC). In this paper, FMC is utilized to fabricate oxide-breakdown PUF successfully. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | plasma / semiconductor fabrication / Reactive Ion Etching (RIE) / PUF / oxide-breakdown / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 123, no. 6, HWS2023-12, pp. 49-50, April 2023. | |
| Paper # | HWS2023-12 | |
| Date of Issue | 2023-04-07 (HWS) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | HWS2023-12 |
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| Conference Information | |
| Committee | HWS |
| Conference Date | 2023-04-14 - 2023-04-15 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | HWS |
| Conference Code | 2023-04-HWS |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | PUF Based on Fetal-Movement Circuit |
| Sub Title (in English) | |
| Keyword(1) | plasma |
| Keyword(2) | semiconductor fabrication |
| Keyword(3) | Reactive Ion Etching (RIE) |
| Keyword(4) | PUF |
| Keyword(5) | oxide-breakdown |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kotaro Naruse |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Takayuki Ueda |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Jun Shiomi |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Yoshihiro Midoh |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Noriyuki Miura |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2023-04-15 10:45:00 |
| Presentation Time | 25 minutes |
| Registration for | HWS |
| Paper # | HWS2023-12 |
| Volume (vol) | vol.123 |
| Number (no) | no.6 |
| Page | pp.49-50 |
| #Pages | 2 |
| Date of Issue | 2023-04-07 (HWS) |
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