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| Presentation | 2023-05-19 15:40 Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure Ichiro Kato, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.)  ED2023-5 CPM2023-5 SDM2023-22 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Using graphene as a FET requires transferring it to an insulating substrate, and defects may be introduced in the graphene in the process. We report that transfer-free graphene can be formed on insulating substrates by using a metal catalyst aggregation technique. In previous studies, we fabricated FETs with transfer-free graphene and observed drain current modulations by applied gate voltages. Furthermore, we confirmed that graphene deposition and device pattern formation can proceed simultaneously by controlling metal aggregation using pre-formed metal Ni patterns, and that several layers of graphene are formed in the vicinity of metal Ni patterns. In this study, we attempted to form Ni patterns with submicron spacing by EB lithography and substrate-heated Ni deposition, and FETs using transfer-free graphene were fabricated. We could confirm the drain current modulations by applied gate voltages. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Graphene / FET / The metal agglomeration technique / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 123, no. 41, ED2023-5, pp. 20-23, May 2023. | |
| Paper # | ED2023-5 | |
| Date of Issue | 2023-05-12 (ED, CPM, SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2023-5 CPM2023-5 SDM2023-22 |
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| Conference Information | |
| Committee | CPM ED SDM |
| Conference Date | 2023-05-19 - 2023-05-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2023-05-CPM-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | FET |
| Keyword(3) | The metal agglomeration technique |
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| Keyword(5) | |
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| 1st Author's Name | Ichiro Kato |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name | Toshiharu Kubo |
| 2nd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 3rd Author's Name | Makoto Miyoshi |
| 3rd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 4th Author's Name | Takashi Egawa |
| 4th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2023-05-19 15:40:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2023-5, CPM2023-5, SDM2023-22 |
| Volume (vol) | vol.123 |
| Number (no) | no.41(ED), no.42(CPM), no.43(SDM) |
| Page | pp.20-23 |
| #Pages | 4 |
| Date of Issue | 2023-05-12 (ED, CPM, SDM) |
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