Paper Abstract and Keywords |
Presentation |
2023-08-01 16:10
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and read out qubit states. Recent research has revealed that the capture and release of carriers by interface traps strongly affect the cryogenic operation of MOSFETs. Therefore, it is speculated that better interface quality would improve the cryogenic operation of MOSFETs by reducing the number of interface traps. In this paper, we report that additional high-pressure hydrogen annealing improves the cryogenic operation of Si (110)-oriented n-MOSFETs. We experimentally exhibit that reducing interface trap density by high-pressure hydrogen annealing improves the cryogenic characteristics, which clarifies the importance of interface quality in Cryo-CMOS technology. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Cryo-CMOS / Cryogenic temperature / Silicon quantum computer / High-pressure hydrogen annealing / Gate stack / / / |
Reference Info. |
IEICE Tech. Rep., vol. 123, no. 143, SDM2023-41, pp. 28-31, Aug. 2023. |
Paper # |
SDM2023-41 |
Date of Issue |
2023-07-25 (SDM, ICD) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2023-41 ICD2023-20 |
Conference Information |
Committee |
SDM ICD ITE-IST |
Conference Date |
2023-08-01 - 2023-08-03 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ. Multimedia Education Bldg. 3F |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
Paper Information |
Registration To |
SDM |
Conference Code |
2023-08-SDM-ICD-IST |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs |
Sub Title (in English) |
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Keyword(1) |
Cryo-CMOS |
Keyword(2) |
Cryogenic temperature |
Keyword(3) |
Silicon quantum computer |
Keyword(4) |
High-pressure hydrogen annealing |
Keyword(5) |
Gate stack |
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1st Author's Name |
Shunsuke Shitakata |
1st Author's Affiliation |
Keio University/National Institute of Advanced Industrial Science and Technology (Keio Univ./AIST) |
2nd Author's Name |
Hiroshi Oka |
2nd Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
3rd Author's Name |
Takumi Inaba |
3rd Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
4th Author's Name |
Shota Iizuka |
4th Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
5th Author's Name |
Kimihiko Kato |
5th Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
6th Author's Name |
Takahiro Mori |
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National Institute of Advanced Industrial Science and Technology (AIST) |
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Speaker |
Author-1 |
Date Time |
2023-08-01 16:10:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2023-41, ICD2023-20 |
Volume (vol) |
vol.123 |
Number (no) |
no.143(SDM), no.144(ICD) |
Page |
pp.28-31 |
#Pages |
4 |
Date of Issue |
2023-07-25 (SDM, ICD) |