IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2023-08-01 16:10
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20
Abstract (in Japanese) (See Japanese page) 
(in English) Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and read out qubit states. Recent research has revealed that the capture and release of carriers by interface traps strongly affect the cryogenic operation of MOSFETs. Therefore, it is speculated that better interface quality would improve the cryogenic operation of MOSFETs by reducing the number of interface traps. In this paper, we report that additional high-pressure hydrogen annealing improves the cryogenic operation of Si (110)-oriented n-MOSFETs. We experimentally exhibit that reducing interface trap density by high-pressure hydrogen annealing improves the cryogenic characteristics, which clarifies the importance of interface quality in Cryo-CMOS technology.
Keyword (in Japanese) (See Japanese page) 
(in English) Cryo-CMOS / Cryogenic temperature / Silicon quantum computer / High-pressure hydrogen annealing / Gate stack / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 143, SDM2023-41, pp. 28-31, Aug. 2023.
Paper # SDM2023-41 
Date of Issue 2023-07-25 (SDM, ICD) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2023-41 ICD2023-20

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2023-08-01 - 2023-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. Multimedia Education Bldg. 3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2023-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs 
Sub Title (in English)  
Keyword(1) Cryo-CMOS  
Keyword(2) Cryogenic temperature  
Keyword(3) Silicon quantum computer  
Keyword(4) High-pressure hydrogen annealing  
Keyword(5) Gate stack  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shunsuke Shitakata  
1st Author's Affiliation Keio University/National Institute of Advanced Industrial Science and Technology (Keio Univ./AIST)
2nd Author's Name Hiroshi Oka  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Takumi Inaba  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Shota Iizuka  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Kimihiko Kato  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Takahiro Mori  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2023-08-01 16:10:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2023-41, ICD2023-20 
Volume (vol) vol.123 
Number (no) no.143(SDM), no.144(ICD) 
Page pp.28-31 
#Pages
Date of Issue 2023-07-25 (SDM, ICD) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan