Paper Abstract and Keywords |
Presentation |
2024-02-29 13:25
High Dynamic Range 920 MHz Band Low Power Rectenna with Low Threshold voltage GaAs GADs Taiki Hirase, Yuya Hirose, Tsukasa Hirai (Kanazawa IT.), Gaku Kato, Takamasa Kono (Nisshinbo Micro Devices), Naoki Sakai, Kenji Itoh (Kanazawa IT.) MW2023-179 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In In this paper, the 920 MHz band low power rectifiers with low threshold voltage GaAs gated anode diodes (GADs) are demonstrated for high dynamic range operation. The GaAs GAD has an advantage of controllability on threshold voltage. This enables low threshold voltage of GaAs GAD that is similar value as a Si SBD. In the developed 920 MHz band rectifiers that are the bridge type and the 2-stage double voltage type, measured rectification efficiencies are higher than that with commercial based Si SBD. Measured sensitivities at output voltage of 0.3 V with open load are -26 dBm and -36 dBm, respectively. Furthermore, estimated maximum input powers are 11 dBm and 12 dBm, respectively. This indicates operation availability at near-field region to the transmitter. This clarifies extreme higher dynamic range of the developed GaAs rectifiers, compared with Si rectifiers in past works. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
microwave / GaAs / gated anode diode / rectifier / MMIC / / / |
Reference Info. |
IEICE Tech. Rep., vol. 123, no. 396, MW2023-179, pp. 25-30, Feb. 2024. |
Paper # |
MW2023-179 |
Date of Issue |
2024-02-22 (MW) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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MW2023-179 |
Conference Information |
Committee |
MW |
Conference Date |
2024-02-29 - 2024-03-01 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okayama Prefectural University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Microwave, etc. |
Paper Information |
Registration To |
MW |
Conference Code |
2024-02-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High Dynamic Range 920 MHz Band Low Power Rectenna with Low Threshold voltage GaAs GADs |
Sub Title (in English) |
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Keyword(1) |
microwave |
Keyword(2) |
GaAs |
Keyword(3) |
gated anode diode |
Keyword(4) |
rectifier |
Keyword(5) |
MMIC |
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1st Author's Name |
Taiki Hirase |
1st Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa IT.) |
2nd Author's Name |
Yuya Hirose |
2nd Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa IT.) |
3rd Author's Name |
Tsukasa Hirai |
3rd Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa IT.) |
4th Author's Name |
Gaku Kato |
4th Author's Affiliation |
Nisshinbo Micro Devices Inc. (Nisshinbo Micro Devices) |
5th Author's Name |
Takamasa Kono |
5th Author's Affiliation |
Nisshinbo Micro Devices Inc. (Nisshinbo Micro Devices) |
6th Author's Name |
Naoki Sakai |
6th Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa IT.) |
7th Author's Name |
Kenji Itoh |
7th Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa IT.) |
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Speaker |
Author-1 |
Date Time |
2024-02-29 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
MW2023-179 |
Volume (vol) |
vol.123 |
Number (no) |
no.396 |
Page |
pp.25-30 |
#Pages |
6 |
Date of Issue |
2024-02-22 (MW) |