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Paper Abstract and Keywords
Presentation 2024-02-29 13:25
High Dynamic Range 920 MHz Band Low Power Rectenna with Low Threshold voltage GaAs GADs
Taiki Hirase, Yuya Hirose, Tsukasa Hirai (Kanazawa IT.), Gaku Kato, Takamasa Kono (Nisshinbo Micro Devices), Naoki Sakai, Kenji Itoh (Kanazawa IT.) MW2023-179
Abstract (in Japanese) (See Japanese page) 
(in English) In In this paper, the 920 MHz band low power rectifiers with low threshold voltage GaAs gated anode diodes (GADs) are demonstrated for high dynamic range operation. The GaAs GAD has an advantage of controllability on threshold voltage. This enables low threshold voltage of GaAs GAD that is similar value as a Si SBD. In the developed 920 MHz band rectifiers that are the bridge type and the 2-stage double voltage type, measured rectification efficiencies are higher than that with commercial based Si SBD. Measured sensitivities at output voltage of 0.3 V with open load are -26 dBm and -36 dBm, respectively. Furthermore, estimated maximum input powers are 11 dBm and 12 dBm, respectively. This indicates operation availability at near-field region to the transmitter. This clarifies extreme higher dynamic range of the developed GaAs rectifiers, compared with Si rectifiers in past works.
Keyword (in Japanese) (See Japanese page) 
(in English) microwave / GaAs / gated anode diode / rectifier / MMIC / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 396, MW2023-179, pp. 25-30, Feb. 2024.
Paper # MW2023-179 
Date of Issue 2024-02-22 (MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MW  
Conference Date 2024-02-29 - 2024-03-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Okayama Prefectural University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave, etc. 
Paper Information
Registration To MW 
Conference Code 2024-02-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Dynamic Range 920 MHz Band Low Power Rectenna with Low Threshold voltage GaAs GADs 
Sub Title (in English)  
Keyword(1) microwave  
Keyword(2) GaAs  
Keyword(3) gated anode diode  
Keyword(4) rectifier  
Keyword(5) MMIC  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Taiki Hirase  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa IT.)
2nd Author's Name Yuya Hirose  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa IT.)
3rd Author's Name Tsukasa Hirai  
3rd Author's Affiliation Kanazawa Institute of Technology (Kanazawa IT.)
4th Author's Name Gaku Kato  
4th Author's Affiliation Nisshinbo Micro Devices Inc. (Nisshinbo Micro Devices)
5th Author's Name Takamasa Kono  
5th Author's Affiliation Nisshinbo Micro Devices Inc. (Nisshinbo Micro Devices)
6th Author's Name Naoki Sakai  
6th Author's Affiliation Kanazawa Institute of Technology (Kanazawa IT.)
7th Author's Name Kenji Itoh  
7th Author's Affiliation Kanazawa Institute of Technology (Kanazawa IT.)
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Speaker Author-1 
Date Time 2024-02-29 13:25:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2023-179 
Volume (vol) vol.123 
Number (no) no.396 
Page pp.25-30 
#Pages
Date of Issue 2024-02-22 (MW) 


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